摘要:
Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要:
Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要:
Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要:
Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要:
A liquid crystal display capable of reducing the stray capacitance of a non-display region and a method of manufacturing the same. The liquid crystal display includes a first substrate, gate lines and data lines intersecting each other on the first substrate to define pixels, a second substrate arranged opposite to the first substrate, a common electrode formed in a display area of the second substrate in which an image is displayed, and a floating electrode formed in a non-display region of the second substrate in which no image is displayed.
摘要:
A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.
摘要:
An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.
摘要:
An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.
摘要:
A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.
摘要:
In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.