Thin-film transistor substrate, method of manufacturing same and display apparatus having same
    1.
    发明授权
    Thin-film transistor substrate, method of manufacturing same and display apparatus having same 有权
    薄膜晶体管基板及其制造方法及其显示装置

    公开(公告)号:US07989807B2

    公开(公告)日:2011-08-02

    申请号:US12195974

    申请日:2008-08-21

    IPC分类号: H01L29/04

    摘要: Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

    摘要翻译: 通过用无机绝缘层密封滤色器层,从而阻挡了设置在薄膜晶体管(TFT)支撑基板上的滤色器层的材料。 在批量生产制造期间,在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上,包括顺应地包括通过滤色器层提供的开口。

    THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME
    2.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME 有权
    薄膜晶体管基板,其制造方法和具有其的显示装置

    公开(公告)号:US20090057671A1

    公开(公告)日:2009-03-05

    申请号:US12195974

    申请日:2008-08-21

    摘要: Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

    摘要翻译: 通过用无机绝缘层密封滤色器层,从而阻挡了设置在薄膜晶体管(TFT)支撑基板上的滤色器层的材料。 在批量生产制造期间,在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上,包括顺应地包括通过滤色器层提供的开口。

    Thin-film transistor substrate, method of manufacturing same and display apparatus having same
    3.
    发明授权
    Thin-film transistor substrate, method of manufacturing same and display apparatus having same 有权
    薄膜晶体管基板及其制造方法及其显示装置

    公开(公告)号:US08426228B2

    公开(公告)日:2013-04-23

    申请号:US13181403

    申请日:2011-07-12

    IPC分类号: H01L29/06 H01L29/08

    摘要: Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

    摘要翻译: 通过用无机绝缘层密封滤色器层,从而阻挡了设置在薄膜晶体管(TFT)支撑基板上的滤色器层的材料。 在批量生产制造期间,在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上,包括顺应地包括通过滤色器层提供的开口。

    THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME
    4.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME 有权
    薄膜晶体管基板,其制造方法和具有其的显示装置

    公开(公告)号:US20110269254A1

    公开(公告)日:2011-11-03

    申请号:US13181403

    申请日:2011-07-12

    IPC分类号: H01L33/08

    摘要: Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

    摘要翻译: 通过用无机绝缘层密封滤色器层,从而阻挡了设置在薄膜晶体管(TFT)支撑基板上的滤色器层的材料。 在批量生产制造期间,在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上,包括顺应地包括通过滤色器层提供的开口。