公开(公告)号：US08581276B2

公开(公告)日：2013-11-12

申请号：US12801268

申请日：2010-06-01

申请人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

发明人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L2933/0016

摘要： Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer.

摘要翻译： 示例性实施例涉及发光器件和制造发光器件的方法。 发光器件可以包括包括多个氮化物半导体层的n型覆盖层，设置在多个氮化物半导体层之间的至少一个中间层，形成有第一电极的通孔，p型覆盖层 ，以及n型覆盖层和p型覆盖层之间的有源层。

公开(公告)号：US20130069074A1

公开(公告)日：2013-03-21

申请号：US13610025

申请日：2012-09-11

申请人： Jae-won LEE ,  Su-hee CHAE ,  Jun-youn KIM ,  In-jun HWANG ,  Hyo-ji CHOI

发明人： Jae-won LEE ,  Su-hee CHAE ,  Jun-youn KIM ,  In-jun HWANG ,  Hyo-ji CHOI

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/0649 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： According to an example embodiment, a power device includes a substrate, a nitride-containing stack on the substrate, and an electric field dispersion unit. Source, drain, and gate electrodes are on the nitride-containing stack. The nitride-containing stack includes a first region that is configured to generate a larger electric field than that of a second region of the nitride-containing stack. The electric field dispersion unit may be between the substrate and the first region of the nitride-containing stack.

摘要翻译： 根据示例性实施例，功率器件包括衬底，衬底上的含氮化物的叠层和电场分散单元。 源极，漏极和栅电极位于含氮化物的堆叠上。 含氮化物的堆叠包括被配置为产生比含氮化物堆叠的第二区域更大的电场的第一区域。 电场分散单元可以在衬底和含氮化物堆叠的第一区域之间。

公开(公告)号：US20120007143A1

公开(公告)日：2012-01-12

申请号：US12983414

申请日：2011-01-03

申请人： Jun-youn Kim ,  Su-hee Chae ,  Hyun-gi Hong ,  Young-jo Tak

发明人： Jun-youn Kim ,  Su-hee Chae ,  Hyun-gi Hong ,  Young-jo Tak

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/0079 ,  H01L33/12 ,  H01S5/005 ,  H01S5/0207 ,  H01S5/32341

摘要： A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions.

摘要翻译： 公开了一种基板结构及其制造方法。 基板结构可以包括在其一个表面上形成有多个突起的基板和根据预定图案形成并且在多个突起上彼此间隔开地形成的多个缓冲层。

公开(公告)号：US20110300654A1

公开(公告)日：2011-12-08

申请号：US13137374

申请日：2011-08-10

申请人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

发明人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

IPC分类号： H01L33/36

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

公开(公告)号：US20110127489A1

公开(公告)日：2011-06-02

申请号：US12801268

申请日：2010-06-01

申请人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

发明人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

IPC分类号： H01L33/04 ,  H01L33/36

CPC分类号： H01L33/382 ,  H01L2933/0016

摘要： Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer.

摘要翻译： 示例性实施例涉及发光器件和制造发光器件的方法。 发光器件可以包括包括多个氮化物半导体层的n型覆盖层，设置在多个氮化物半导体层之间的至少一个中间层，形成有第一电极的通孔，p型覆盖层 ，以及n型覆盖层和p型覆盖层之间的有源层。

公开(公告)号：US07687374B2

公开(公告)日：2010-03-30

申请号：US12149313

申请日：2008-04-30

申请人： Youn Joon Sung ,  Su Hee Chae

发明人： Youn Joon Sung ,  Su Hee Chae

IPC分类号： H01L21/00

CPC分类号： H01S5/0201 ,  H01S5/0203

摘要： Provided is a method of isolating semiconductor laser diodes (LDs), the method including the steps of: preparing a substrate; forming a plurality of semiconductor LDs on the substrate, each semiconductor LD including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, an n-electrode, a ridge portion, and a p-electrode, the ridge portion being formed by etching the p-type semiconductor layer such that a portion of the p-type semiconductor layer protrudes, the p-electrode being formed on the ridge portion; partially forming base cut lines on the surface of the substrate excluding the ridge portions; and isolating the semiconductor LDs into a bar shape along the base cut lines.

摘要翻译： 提供一种隔离半导体激光二极管（LD）的方法，该方法包括以下步骤：制备衬底; 在基板上形成多个半导体LD，每个半导体LD包括n型半导体层，有源层，p型半导体层，n电极，脊部分和p电极，脊部分 通过蚀刻p型半导体层而形成，使得p型半导体层的一部分突出，p电极形成在脊部上; 在除了脊部之外的基板的表面上部分地形成基切割线; 并且将半导体LD沿基底切割线隔离成棒状。

公开(公告)号：US07276740B2

公开(公告)日：2007-10-02

申请号：US11372204

申请日：2006-03-10

申请人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

发明人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

IPC分类号： H01L33/00

CPC分类号： H01L23/15 ,  H01L23/49811 ,  H01L23/49838 ,  H01L33/62 ,  H01L2224/10175

摘要： A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

摘要翻译： 提供了一种用于发光器件封装的基座。 基座包括基板; 分别形成在所述基板上的第一接合层和第二接合层; 分别形成在第一接合层和第二接合层上的第一阻挡层和第二阻挡层; 分别形成在第一阻挡层和第二阻挡层上的第一焊料和第二焊料; 以及形成在第一阻挡层和第二阻挡层周围的第一阻挡层和第二阻挡层，在倒装芯片工艺期间阻挡熔化的第一焊料和熔化的第二焊料溢出。

公开(公告)号：US20060249745A1

公开(公告)日：2006-11-09

申请号：US11387864

申请日：2006-03-24

申请人： Su-hee Chae ,  Tae-hoon Jang ,  Hyung-kun Kim ,  Youn-joon Sung

发明人： Su-hee Chae ,  Tae-hoon Jang ,  Hyung-kun Kim ,  Youn-joon Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/647 ,  B82Y20/00 ,  H01L33/642 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02492 ,  H01S5/22 ,  H01S5/34333

摘要： A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.

摘要翻译： 散热结构被倒装贴合到发光元件上并且有利于散热。 散热结构包括：面向发光元件并具有至少一个凹槽的基座; 填充到所述至少一个凹槽的至少一部分中的导电材料层; 以及插入在发光元件和用于接合的基座之间的焊料层。 散热结构和具有该散热结构的发光装置允许在操作期间有效地散发在发光元件中产生的热量。

公开(公告)号：US20060138444A1

公开(公告)日：2006-06-29

申请号：US11220696

申请日：2005-09-08

申请人： Won-kyoung Chio ,  Tae-hoon Jang ,  Su-hee Chae ,  Hyung-kun Kim

发明人： Won-kyoung Chio ,  Tae-hoon Jang ,  Su-hee Chae ,  Hyung-kun Kim

IPC分类号： H01L29/24

CPC分类号： H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/48091 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02256 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/0425 ,  H01L2924/00014

摘要： A flip-chip bonding structure of a light-emitting element is provided. The structure improves a heat emission efficiency by using a metal column having a high thermal conductivity instead of a solder bump. The structure includes a light-emitting element, a sub-mount, and a metal column. The metal column connects the light-emitting element with the sub-mount electrically and thermally.

摘要翻译： 提供了一种发光元件的倒装键合结构。 该结构通过使用具有高导热性的金属柱而不是焊料凸块来提高散热效率。 该结构包括发光元件，副安装座和金属柱。 金属柱将发光元件与电子和热电子元件连接。

公开(公告)号：US20050002428A1

公开(公告)日：2005-01-06

申请号：US10732241

申请日：2003-12-11

申请人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

发明人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

IPC分类号： H01S5/022 ,  H01S5/02 ,  H01S5/024 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S3/04 ,  H01S5/00

CPC分类号： H01S5/0206 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2205 ,  H01L2924/00

摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

摘要翻译： 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。