APPARATUS FOR PROTECTING DEVICE OF MOTOR DRIVE INVERTER

    公开(公告)号:US20210057904A1

    公开(公告)日:2021-02-25

    申请号:US16929479

    申请日:2020-07-15

    IPC分类号: H02H7/122 H02P29/024

    摘要: An apparatus for protecting a device of a motor drive inverter includes a plurality of power modules configured to control the multi-phase alternating current supplied to the motor. Each of the plurality of power modules includes a top phase switching device connected to a positive terminal of the battery, a bottom phase switching device connected in series to the top phase switching device and connected to a negative terminal of the battery, and a current interruption unit connected in series to the top phase switching device and the bottom phase switching device, and configured to be disconnected when a current greater than or equal to a desired interrupting current flows thereto, so as to prevent a switching device of a power module from being burned out due to an overcurrent by installing a fuse wire to the power module.

    SYSTEM AND METHOD FOR CONTROLLING POWER MODULE

    公开(公告)号:US20170346395A1

    公开(公告)日:2017-11-30

    申请号:US15272791

    申请日:2016-09-22

    IPC分类号: H02M3/156

    摘要: A system and method for controlling a power module are provided. The system includes a switch element that adjusts output of a power module, a driving signal generation unit that generates a switch ON signal and a switch OFF signal for the switch element, and a latch that is connected between the driving signal generation unit and the switch element and is configured to delay the switch ON signal generated by the driving signal generation unit by a preset delay time and transfer a delayed signal to the switch element. Additionally, a compensation unit is connected between the latch and the power module and is configured to adjust the output of the power module during the delay time by which the latch delays the switch ON signal.

    CIRCUIT FOR DETECTING FAILURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) POWER MODULE
    4.
    发明申请
    CIRCUIT FOR DETECTING FAILURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) POWER MODULE 审中-公开
    用于检测绝缘栅双极晶体管(IGBT)功率模块故障的电路

    公开(公告)号:US20170030962A1

    公开(公告)日:2017-02-02

    申请号:US14960362

    申请日:2015-12-05

    摘要: A circuit for detecting failure of an insulated-gate bipolar transistor (IGBT) power module, is provided to combine failure detecting signals of an IGBT power module using a photo coupler to transmit the isolated signals. The failure detecting circuit includes a circuit that combines six phase isolated failure detecting signals transmitted from a gate drive IC via a photo coupler to be one signal. A plurality of logic gate ICs are omitted, to reduce a material cost, a size of a circuit board, and power consumption.

    摘要翻译: 提供了一种用于检测绝缘栅双极晶体管(IGBT)功率模块的故障的电路,用于组合使用光耦合器的IGBT功率模块的故障检测信号以传输隔离信号。 故障检测电路包括将从栅极驱动IC经由光耦合器发送的六相隔离故障检测信号组合为一个信号的电路。 省略了多个逻辑门IC,以减少材料成本,电路板的尺寸和功耗。