Stack type power module and method of manufacturing the same

    公开(公告)号:US10748834B2

    公开(公告)日:2020-08-18

    申请号:US16179264

    申请日:2018-11-02

    发明人: Kwang-Joon Han

    摘要: A stack type power module includes: a power semiconductor having a gate and an emitter, each of which has a pad shape, adjacent to each other on one surface of the power semiconductor, and a collector having a pad shape on another surface of the power semiconductor; an upper substrate layer stacked on an upper portion of the power semiconductor, and electrically connected to a metal layer that has a lower surface with which the collector is in contact; and a lower substrate layer stacked on a lower portion of the power semiconductor, and electrically connected to the metal layer that has an upper surface with which each of the gate and the emitter is in contact.