Patent search ap:("IBM") AND inv:"KUIPER LUBERTUS L" Page 1

1.

发明授权
Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum 失效
Title translation: 带有线和电极的半导体器件，其中含有2至3％的硅与残留的铝

公开(公告)号：US3609470A

公开(公告)日：1971-09-28

申请号：US3609470D

申请日：1968-02-19

Applicant: IBM

Inventor： KUIPER LUBERTUS L

IPC: H01L21/285 , H01L5/02

CPC classification number: H01L21/28512 , Y10S148/018 , Y10S148/02 , Y10S228/903

Abstract: This is a semiconductor device provided with an electrode which contains a small percentage of the semiconductor material with the remainder of the electrode being metal.

2.

发明授权
Masking technique for area reduction of planar transistors 失效
Title translation: 用于减少平面晶体管的屏蔽技术

公开(公告)号：US3477123A

公开(公告)日：1969-11-11

申请号：US3477123D

申请日：1965-12-21

Applicant: IBM

Inventor： BARSON FRED , KUIPER LUBERTUS L

IPC: H01L21/00 , H01L23/29 , B01J17/00 , H01L5/00

CPC classification number: H01L21/00 , H01L23/291 , H01L2924/0002 , Y10S148/043 , Y10S148/106 , Y10S148/145 , H01L2924/00

3.

发明授权
Metal-insulator films for semiconductor devices 失效
Title translation: 金属绝缘膜用于半导体器件

公开(公告)号：US3567509A

公开(公告)日：1971-03-02

申请号：US3567509D

申请日：1968-02-19

Applicant: IBM

Inventor： KUIPER LUBERTUS L

IPC: H01L21/00 , H01L21/285 , H01L23/29 , H01L23/485 , H01L9/00

CPC classification number: H01L23/291 , H01L21/00 , H01L21/28512 , H01L23/485 , H01L2924/0002 , Y10S148/018 , Y10S148/02 , Y10S148/033 , Y10S438/958 , Y10T428/12528 , Y10T428/12597 , Y10T428/12674 , Y10T428/12736 , H01L2924/00

Abstract: THIS IS A METAL-INSULATING COMPOUND FILM FOR SEMICONDUCTOR DEVICES WHEREIN THE METAL IS A METAL-SEMICONDUTOR ALLOY WITH THE SEMICONDUCTOR BEING A SMALL PERCENTAGE OF THE ALLOY.

4.

发明授权
Solid state epitaxial growth of silicon by migration from a silicon-aluminum alloy deposit 失效
Title translation: 通过从硅铝合金沉积物迁移，硅的固态外延生长

公开(公告)号：US3413157A

公开(公告)日：1968-11-26

申请号：US49918965

申请日：1965-10-21

Applicant: IBM

Inventor： KUIPER LUBERTUS L

IPC: C30B1/02 , C30B19/02 , H01L21/00 , H01L21/20 , H01L29/00

CPC classification number: H01L21/00 , C30B1/02 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02491 , H01L21/02532 , H01L29/00 , Y10S148/003 , Y10S148/026 , Y10S148/142 , Y10S148/154 , Y10S148/166 , Y10S148/17

Abstract: 1,148,409. Epitaxial silicon deposition. INTERNATIONAL BUSINESS MACHINES CORP. 20 Oct., 1966 [21 Oct., 1965], No. 46895/66. Heading C1A. [Also in Divisions C7 and H1] An epitaxial Si layer is grown on a Si substrate by depositing Si and Al thereon (e.g. by evaporation of an Al or Si alloy on successive layers of Al and Si) and heating the coated base at a temperature below the Al-Si eutectic temperature to cause a crystalline Si layer to grow on the substrate surface (e.g. at 565‹ C.).

5.

发明授权
Method for providing electrical connections to semiconductor devices 失效
Title translation: 用于提供与半导体器件的电连接的方法

公开(公告)号：US3382568A

公开(公告)日：1968-05-14

申请号：US47407465

申请日：1965-07-22

Applicant: IBM

Inventor： KUIPER LUBERTUS L

IPC: H01L21/00 , H01L21/285 , H01L23/29 , H01L23/485

CPC classification number: H01L23/291 , H01L21/00 , H01L21/28512 , H01L23/485 , H01L2924/0002 , Y10S148/018 , Y10S148/02 , Y10S148/033 , Y10S438/958 , Y10T428/12528 , Y10T428/12597 , Y10T428/12674 , Y10T428/12736 , H01L2924/00

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