Patent search ap:("IBM") AND inv:"SELBY MICHAEL C" Page 1

1.

发明授权
Semiconductor device having compensated barrier zones between n-p junctions 失效
Title translation: 具有N-P结之间的补偿障碍区的半导体器件

公开(公告)号：US3473093A

公开(公告)日：1969-10-14

申请号：US3473093D

申请日：1965-08-18

Applicant: IBM

Inventor： BILOUS OREST , MEULEMANS DARRELL R , PECORARO RAYMOND P , SELBY MICHAEL C

IPC: H01L29/73 , H01L21/00 , H01L21/331 , H01L23/485 , H01L27/00 , H01L29/00 , H01L29/861 , H01L3/00 , H01L5/00

CPC classification number: H01L27/00 , H01L21/00 , H01L23/485 , H01L29/00 , H01L2924/0002 , H01L2924/3011 , Y10S148/035 , Y10S148/062 , Y10S148/085 , Y10S438/904 , Y10S438/919 , H01L2924/00

2.

发明授权
A process for fabricating semiconductor devices having compensated barrier zones between np-junctions 失效
Title translation: 用于制备具有NP结之间的补偿障碍区的半导体器件的工艺

公开(公告)号：US3617398A

公开(公告)日：1971-11-02

申请号：US3617398D

申请日：1968-10-22

Applicant: IBM

Inventor： BILOUS OREST , MEULEMANS DARRELL R , PECORADO RAYMOND P , SELBY MICHAEL C

IPC: H01L21/00 , H01L27/06 , H01L27/082 , H01L7/36 , C23C13/00 , H01L5/00

CPC classification number: H01L27/0821 , H01L21/00 , H01L27/0652 , Y10S148/049 , Y10S148/062 , Y10S148/085 , Y10S438/919

Abstract: A process for forming semiconductor devices by forming in a semiconductor substrate of one conductivity type a diffused region of a second conductivity type circumscribed by an adjacent gold compensated intrinsic region.

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