公开(公告)号：US3445734A

公开(公告)日：1969-05-20

申请号：US3445734D

申请日：1965-12-22

Applicant: IBM

Inventor： PECORARO RAYMOND P ,  BILOUS OREST

IPC: H01L21/74 ,  H01L27/00 ,  H01L29/00 ,  H01L29/735 ,  H01L11/00

CPC classification number: H01L29/735 ,  H01L21/74 ,  H01L27/00 ,  H01L29/00 ,  Y10S148/037 ,  Y10S148/049 ,  Y10S148/053 ,  Y10S148/106 ,  Y10S148/145

公开(公告)号：US3473093A

公开(公告)日：1969-10-14

申请号：US3473093D

申请日：1965-08-18

Applicant: IBM

Inventor： BILOUS OREST ,  MEULEMANS DARRELL R ,  PECORARO RAYMOND P ,  SELBY MICHAEL C

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L23/485 ,  H01L27/00 ,  H01L29/00 ,  H01L29/861 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L27/00 ,  H01L21/00 ,  H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S148/035 ,  Y10S148/062 ,  Y10S148/085 ,  Y10S438/904 ,  Y10S438/919 ,  H01L2924/00

公开(公告)号：US3617398A

公开(公告)日：1971-11-02

申请号：US3617398D

申请日：1968-10-22

Applicant: IBM

Inventor： BILOUS OREST ,  MEULEMANS DARRELL R ,  PECORADO RAYMOND P ,  SELBY MICHAEL C

IPC: H01L21/00 ,  H01L27/06 ,  H01L27/082 ,  H01L7/36 ,  C23C13/00 ,  H01L5/00

CPC classification number: H01L27/0821 ,  H01L21/00 ,  H01L27/0652 ,  Y10S148/049 ,  Y10S148/062 ,  Y10S148/085 ,  Y10S438/919

Abstract: A process for forming semiconductor devices by forming in a semiconductor substrate of one conductivity type a diffused region of a second conductivity type circumscribed by an adjacent gold compensated intrinsic region.

公开(公告)号：US3421057A

公开(公告)日：1969-01-07

申请号：US3421057D

申请日：1965-08-23

Applicant: IBM

Inventor： BILOUS OREST ,  CASTRUCCI PAUL P ,  CLARK TOMMY D

IPC: H01L21/22 ,  H01L29/00 ,  H01L29/06 ,  H01L29/36 ,  H01L29/73 ,  H01L3/12 ,  H01L7/02 ,  H01L7/44

CPC classification number: H01L29/36 ,  H01L21/22 ,  H01L29/00 ,  H01L29/06 ,  H01L29/73 ,  Y10S148/062