公开(公告)号：US09874821B2

公开(公告)日：2018-01-23

申请号：US15134616

申请日：2016-04-21

Applicant: IMEC VZW

Inventor： Sandip Halder ,  Dieter Van Den Heuvel ,  Vincent Truffert ,  Philippe Leray

IPC: G01N21/00 ,  G03F7/20 ,  G03F1/84 ,  G01N21/88 ,  G01N21/956

CPC classification number: G03F7/7065 ,  G01N21/8851 ,  G01N21/95607 ,  G01N2021/8854 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/70441 ,  G03F7/70625 ,  G03F7/70641

Abstract: The present disclosure is related to a method for detecting and ranking hotspots in a lithographic mask used for printing a pattern on a substrate. According to example embodiments, the ranking is based on defect detection on a modulated focus wafer or a modulated dose wafer, where the actual de-focus or dose value at defect locations is taken into account, in addition to a de-focus or dose setting applied to a lithographic tool when a mask pattern is printed on the wafer. Additionally or alternatively, lithographic parameters other than the de-focus or dose can be used as a basis for the ranking method.

公开(公告)号：US20160313647A1

公开(公告)日：2016-10-27

申请号：US15134616

申请日：2016-04-21

Applicant: IMEC VZW

Inventor： Sandip Halder ,  Dieter Van Den Heuvel ,  Vincent Truffert ,  Philippe Leray

IPC: G03F7/20 ,  G01N21/88 ,  G01N21/956

CPC classification number: G03F7/7065 ,  G01N21/8851 ,  G01N21/95607 ,  G01N2021/8854 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/70441 ,  G03F7/70625 ,  G03F7/70641

Abstract: The present disclosure is related to a method for detecting and ranking hotspots in a lithographic mask used for printing a pattern on a substrate. According to example embodiments, the ranking is based on defect detection on a modulated focus wafer or a modulated dose wafer, where the actual de-focus or dose value at defect locations is taken into account, in addition to a de-focus or dose setting applied to a lithographic tool when a mask pattern is printed on the wafer. Additionally or alternatively, lithographic parameters other than the de-focus or dose can be used as a basis for the ranking method.

Abstract translation: 本公开涉及用于在用于在基板上印刷图案的光刻掩模中检测和排列热点的方法。 根据示例实施例，排序基于调制聚焦晶片或调制剂量晶片上的缺陷检测，其中除了去焦点或剂量设置之外还考虑了缺陷位置处的实际去焦点或剂量值 当将掩模图案印刷在晶片上时应用于光刻工具。 附加地或替代地，除去焦点或剂量之外的光刻参数可以用作排序方法的基础。