公开(公告)号：US20200152804A1

公开(公告)日：2020-05-14

申请号：US16676882

申请日：2019-11-07

Applicant: IMEC VZW

Inventor： Gaspard Hiblot ,  Luka Kljucar

IPC: H01L29/84 ,  H01L29/417 ,  H01L29/45 ,  H01L29/43 ,  H01L23/528 ,  G01L1/20

Abstract: A sensor for measuring mechanical stress in a layered metallization structure such as the back end of line portion of an integrated circuit die is provided. The sensor operates as a field effect transistor comprising a gate electrode, gate dielectric, channel and source and drain electrodes, wherein the gate electrode is a conductor of a first metallization level and the source and drain electrodes are two interconnect vias, connecting the channel to respective conductors in an adjacent level. At least one of the interconnect vias is formed of a material whereof the electrical resistance is sensitive to mechanical stress in the direction of the via. The sensitivity of the electrical resistance to the mechanical stress is sufficient to facilitate measurement of the stress by reading out the drain current of the transistor. The sensor thereby allows monitoring of stress in the BEOL prior to cracking.

公开(公告)号：US11765910B2

公开(公告)日：2023-09-19

申请号：US17092135

申请日：2020-11-06

Applicant: IMEC vzw

Inventor： Gaspard Hiblot ,  Shamin Houshmand Sharifi ,  Luka Kljucar

IPC: H10B61/00 ,  H01L29/872 ,  G11C11/16 ,  H01L29/221 ,  H01L29/66 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10B61/10 ,  G11C11/161 ,  H01L29/221 ,  H01L29/66143 ,  H01L29/872 ,  H10N50/01 ,  H10N50/80

Abstract: The disclosed technology relates to a selector device for a memory array, and a method of forming the selector device. In some embodiments, the selector device comprises a first electrode layer embedded in an oxide; a second electrode layer arranged above the first electrode layer and separated from the first electrode layer by the oxide; and a semiconductor material forming a semiconductor layer on the top surface of the second electrode layer, and extending through the second electrode layer and the oxide onto the top surface of the first electrode layer, wherein the semiconductor material contacts the first electrode layer and the second electrode layer. In some embodiments, the selector device helps to solve the sneak path problem in the memory array it is inserted into.

公开(公告)号：US11038067B2

公开(公告)日：2021-06-15

申请号：US16676882

申请日：2019-11-07

Applicant: IMEC VZW

Inventor： Gaspard Hiblot ,  Luka Kljucar

IPC: H01L29/84 ,  G01L1/20 ,  H01L23/528 ,  H01L29/417 ,  H01L29/43 ,  H01L29/45

Abstract: A sensor for measuring mechanical stress in a layered metallization structure such as the back end of line portion of an integrated circuit die is provided. The sensor operates as a field effect transistor comprising a gate electrode, gate dielectric, channel and source and drain electrodes, wherein the gate electrode is a conductor of a first metallization level and the source and drain electrodes are two interconnect vias, connecting the channel to respective conductors in an adjacent level. At least one of the interconnect vias is formed of a material whereof the electrical resistance is sensitive to mechanical stress in the direction of the via. The sensitivity of the electrical resistance to the mechanical stress is sufficient to facilitate measurement of the stress by reading out the drain current of the transistor. The sensor thereby allows monitoring of stress in the BEOL prior to cracking.

公开(公告)号：US20210143213A1

公开(公告)日：2021-05-13

申请号：US17092135

申请日：2020-11-06

Applicant: IMEC vzw

Inventor： Gaspard Hiblot ,  Shamin Houshmand Sharifi ,  Luka Kljucar

IPC: H01L27/22 ,  G11C11/16 ,  H01L29/872 ,  H01L29/221 ,  H01L29/66 ,  H01L43/02 ,  H01L43/12

Abstract: The disclosed technology relates to a selector device for a memory array, and a method of forming the selector device. In some embodiments, the selector device comprises a first electrode layer embedded in an oxide; a second electrode layer arranged above the first electrode layer and separated from the first electrode layer by the oxide; and a semiconductor material forming a semiconductor layer on the top surface of the second electrode layer, and extending through the second electrode layer and the oxide onto the top surface of the first electrode layer, wherein the semiconductor material contacts the first electrode layer and the second electrode layer. In some embodiments, the selector device helps to solve the sneak path problem in the memory array it is inserted into.