公开(公告)号：US09548208B2

公开(公告)日：2017-01-17

申请号：US15045923

申请日：2016-02-17

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Zheng Tao ,  Nadia Vandenbroeck ,  Safak Sayan

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L29/66

CPC classification number: H01L21/3081 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L29/66795

Abstract: A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first and a second polymer component, whereby one of the components aligns to the guiding structures, by chemo-epitaxy; thereafter, removing a first of the components of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions in between the structures of the second component, and exposing the structures of the second component; removing the structures of the second component, selectively with respect to the structures of the planarizing layer; and patterning the underlying layer, thereby using the structures of the planarizing layer as a mask.

Abstract translation: 描述了用于图案化下层的方法，所述方法包括在下层上提供引导层，所述引导层包括引导结构并且基本上是平面的; 在引导层上提供嵌段共聚物层; 诱导嵌段共聚物层以第一和第二聚合物组分的规则形式的结构相分离，由此其中一种组分通过化学外延对准引导结构; 此后，完全去除嵌段共聚物层中的第一组分，留下第二组分的规则的结构图案; 在所述第二部件和所述引导层的结构的规则图案上提供平坦化层; 去除所述平坦化层的一部分，从而在所述第二部件的结构之间的位置处留下所述平坦化层的规则的结构图案，并暴露所述第二部件的结构; 相对于平坦化层的结构选择性地去除第二部件的结构; 并对底层进行图案化，由此使用平坦化层的结构作为掩模。

公开(公告)号：US20160254161A1

公开(公告)日：2016-09-01

申请号：US15045923

申请日：2016-02-17

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Zheng Tao ,  Nadia Vandenbroeck ,  Safak Sayan

IPC: H01L21/308 ,  H01L29/66

CPC classification number: H01L21/3081 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L29/66795

Abstract: A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising guiding structures and being substantially planar; providing a block-copolymer layer on the guiding layer; inducing phase separation of the block-copolymer layer in a regular pattern of structures of a first and a second polymer component, whereby one of the components aligns to the guiding structures, by chemo-epitaxy; thereafter, removing a first of the components of the block-copolymer layers completely, leaving a regular pattern of structures of the second component; providing a planarizing layer over the regular pattern of structures of the second component and the guiding layer; removing a portion of the planarizing layer, thereby leaving a regular pattern of structures of the planarizing layer at positions in between the structures of the second component, and exposing the structures of the second component; removing the structures of the second component, selectively with respect to the structures of the planarizing layer; and patterning the underlying layer, thereby using the structures of the planarizing layer as a mask.

Abstract translation: 描述了用于图案化下层的方法，所述方法包括在下层上提供引导层，所述引导层包括引导结构并且基本上是平面的; 在引导层上提供嵌段共聚物层; 诱导嵌段共聚物层以第一和第二聚合物组分的规则形式的结构相分离，由此其中一种组分通过化学外延对准引导结构; 此后，完全去除嵌段共聚物层中的第一组分，留下第二组分的规则的结构图案; 在所述第二部件和所述引导层的结构的规则图案上提供平坦化层; 去除所述平坦化层的一部分，从而在所述第二部件的结构之间的位置处留下所述平坦化层的规则的结构图案，并暴露所述第二部件的结构; 相对于平坦化层的结构选择性地去除第二部件的结构; 并对底层进行图案化，由此使用平坦化层的结构作为掩模。