公开(公告)号：US09523572B2

公开(公告)日：2016-12-20

申请号：US14583432

申请日：2014-12-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Tzung-Te Chen ,  Chien-Ping Wang ,  Shang-Ping Ying ,  Yi-Keng Fu ,  Hsun-Chih Liu

IPC: G01B11/25 ,  G01B11/255

CPC classification number: G01B11/2513 ,  G01B11/255

Abstract: An apparatus for measuring of a curvature of a thin film, is adapted to measure the curvature of a thin-film. The apparatus includes a light emitting module, a first optical module, a second optical module, a third optical module, an image capture module, and an image analysis module. The light emitting module emits at least one line laser as an incident light whose cross-sectional shape is a geometric picture formed of lines. The incident light is transmitted through a first optical path formed of the first optical module, and is directed to incident the thin film by the second optical module. The reflected light is reflected by the thin film go through the second optical path, and is directed to transmit through the third optical path by the third optical module, and then is captured by the capture module to form a second geometric picture.

Abstract translation: 用于测量薄膜曲率的装置适于测量薄膜的曲率。 该装置包括发光模块，第一光学模块，第二光学模块，第三光学模块，图像捕获模块和图像分析模块。 发光模块发射至少一条线激光器作为入射光，其入射光的横截面形状是由线形成的几何图形。 入射光通过由第一光学模块形成的第一光路透射，并且被引导通过第二光学模块入射薄膜。 反射光被薄膜反射穿过第二光路，并且被第三光学模块引导通过第三光路传输，然后被捕获模块捕获以形成第二几何图像。

公开(公告)号：US09341669B2

公开(公告)日：2016-05-17

申请号：US14029803

申请日：2013-09-18

Applicant: Industrial Technology Research Institute

Inventor： Chien-Ping Wang ,  Tzung-Te Chen ,  Yen-Liang Liu ,  Chun-Fan Dai ,  Han-Kuei Fu ,  Pei-Ting Chou

IPC: G01R31/00 ,  G01R31/26

CPC classification number: G01R31/2635

Abstract: The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.

Abstract translation: 本发明公开了一种发光二极管测试装置，其包括电源模块，探针，控制单元和数据采集单元。 电源模块向测试项目提供第一电流或第二电流。 探头测量测试项目的特征。 控制单元控制电源模块以提供第一电流或第二电流。 数据采集​​单元从探头获取测试项目的特征。 电源模块包括第一电流源，至少一个第二电流源和至少一个保护器。 第一个电流源将第一个电流提供给测试项目。 至少一个第二电流源提供至少一个附加电流。 该至少一个保护器防止第一电流反馈到至少一个第二电流源。

公开(公告)号：US20140107961A1

公开(公告)日：2014-04-17

申请号：US13863383

申请日：2013-04-16

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Tzung-Te Chen ,  Chun-Fan Dai ,  Han-Kuei Fu ,  Chien-Ping Wang ,  Pei-Ting Chou

IPC: G01R31/26

CPC classification number: G01R31/2644 ,  G01R31/001 ,  G01R31/2603 ,  G01R31/275

Abstract: A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.

Abstract translation: 提供了半导体元件的测试方法和测试系统。 该方法包括以下步骤。 测定静电放电（ESD）电压的电平。 提供多个样品组分。 测试ESD电压施加在样品组件上，用于测试样品组分的ESD衰减率。 检测出样品成分的ESD耐受电压。 将ESD耐受电压和静电放电率之间的关系记录到数据库。 测试ESD电压施加在半导体元件上，用于测试半导体元件的ESD衰减率。 根据半导体元件的ESD衰减率来查找数据库，以确定半导体元件的ESD耐受电压。

公开(公告)号：US20140015531A1

公开(公告)日：2014-01-16

申请号：US14029803

申请日：2013-09-18

Applicant: Industrial Technology Research Institute

Inventor： Chien-Ping Wang ,  Tzung-Te Chen ,  Yen-Liang Liu ,  Chun-Fan Dai ,  Han-Kuei Fu ,  Pei-Ting Chou

IPC: G01R31/26

CPC classification number: G01R31/2635

Abstract: The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.

Abstract translation: 本发明公开了一种发光二极管测试装置，其包括电源模块，探针，控制单元和数据采集单元。 电源模块向测试项目提供第一电流或第二电流。 探头测量测试项目的特征。 控制单元控制电源模块以提供第一电流或第二电流。 数据采集​​单元从探头获取测试项目的特性。 电源模块包括第一电流源，至少一个第二电流源和至少一个保护器。 第一个电流源将第一个电流提供给测试项目。 至少一个第二电流源提供至少一个附加电流。 该至少一个保护器防止第一电流反馈到至少一个第二电流源。

公开(公告)号：US09726713B2

公开(公告)日：2017-08-08

申请号：US13863383

申请日：2013-04-16

Applicant: Industrial Technology Research Institute

Inventor： Tzung-Te Chen ,  Chun-Fan Dai ,  Han-Kuei Fu ,  Chien-Ping Wang ,  Pei-Ting Chou

IPC: G01R31/26 ,  G01R31/00 ,  G01R31/27

CPC classification number: G01R31/2644 ,  G01R31/001 ,  G01R31/2603 ,  G01R31/275

Abstract: A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.