公开(公告)号：US20180327324A1

公开(公告)日：2018-11-15

申请号：US16040785

申请日：2018-07-20

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching HSIAO ,  Wen-Po TU ,  Chu-Pi JENG ,  Mu-Hsi SUNG

IPC分类号： C04B35/573 ,  C04B35/626 ,  C04B35/628 ,  C01B32/956 ,  C30B35/00 ,  C30B23/00 ,  C30B29/36

CPC分类号： C04B35/573 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62839 ,  C04B35/62897 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/441 ,  C04B2235/48 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

摘要： A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

公开(公告)号：US20210275965A1

公开(公告)日：2021-09-09

申请号：US17327131

申请日：2021-05-21

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Kuo-Lun HUANG ,  Mu-Hsi SUNG ,  Keng-Yang CHEN ,  Li-Duan TSAI

IPC分类号： B01D53/46 ,  C01B32/984 ,  C01B35/02 ,  C01B32/97 ,  C01B32/20 ,  B01J3/00 ,  B01J8/02 ,  B01J8/00

摘要： A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

公开(公告)号：US20210139330A1

公开(公告)日：2021-05-13

申请号：US16729065

申请日：2019-12-27

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Mu-Hsi SUNG ,  Kuo-Lun HUANG

IPC分类号： C01B32/05 ,  C01B32/963 ,  C01B32/97

摘要： A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.

公开(公告)号：US20190176085A1

公开(公告)日：2019-06-13

申请号：US15854375

申请日：2017-12-26

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching HSIAO ,  Chu-Pi JENG ,  Kuo-Lun HUANG ,  Mu-Hsi SUNG ,  Keng-Yang CHEN ,  Li-Duan TSAI

IPC分类号： B01D53/46 ,  C01B35/02 ,  C01B32/984

摘要： A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

公开(公告)号：US20180134625A1

公开(公告)日：2018-05-17

申请号：US15386749

申请日：2016-12-21

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching HSIAO ,  Wen-Po TU ,  Chu-Pi JENG ,  Mu-Hsi SUNG

IPC分类号： C04B35/573 ,  C04B35/628 ,  C04B35/626

CPC分类号： C04B35/573 ,  C01B31/36 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62839 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

摘要： A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.