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公开(公告)号：US20140242374A1
公开(公告)日：2014-08-28
申请号：US13774624
申请日：2013-02-22
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Johann Strasser , Thomas Kunstmann , Manfred Frank , Werner Robl , Maximilian Krug , Simon Faiss , Matthias Mueller
CPC classification number: H01L23/14 , B05D7/52 , B32B3/26 , C23C18/1644 , C23C18/1651 , C23C18/32 , C23C18/50 , C25D7/12 , C25D7/123 , H01L23/3733 , H01L23/49866 , H01L23/53238 , H01L2924/0002 , Y10T428/249956 , Y10T428/249957 , Y10T428/24997 , H01L2924/00
Abstract: Various methods, apparatuses and devices relate to porous metal layers on a substrate which are three-dimensionally coated. In one embodiment, a porous metal layer is deposited over a substrate. The porous metal layer can be three-dimensionally coated with a coating material.
Abstract translation: 各种方法，装置和装置涉及三维涂覆在基底上的多孔金属层。 在一个实施例中，多孔金属层沉积在衬底上。 多孔金属层可以用涂料三维涂覆。
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Patent Agency Ranking
公开(公告)号：US20140217062A1
公开(公告)日：2014-08-07
申请号：US13762117
申请日：2013-02-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Thomas Kunstmann , Stefan Willkofer , Anja Gissibl , Johann Strasser , Matthias Mueller , Eva-Maria Hess
CPC classification number: C23F1/02 , C23F1/08 , C23F1/18 , H01L21/32134 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。
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公开(公告)号：US10475743B2
公开(公告)日：2019-11-12
申请号：US15458366
申请日：2017-03-14
Applicant: Infineon Technologies AG
Inventor： Frank Hille , Ravi Keshav Joshi , Michael Fugger , Oliver Humbel , Thomas Laska , Matthias Mueller , Roman Roth , Carsten Schaeffer , Hans-Joachim Schulze , Holger Schulze , Juergen Steinbrenner , Frank Umbach
IPC: H01L21/768 , H01L23/532 , H01L23/522 , H01L23/528
Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.
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公开(公告)号：US20220415820A1
公开(公告)日：2022-12-29
申请号：US17850178
申请日：2022-06-27
Applicant: Infineon Technologies AG
Inventor： Christian Hammer , Matthias Mueller , Wolfgang Lehnert
IPC: H01L23/532 , H01L21/02 , H01L21/768 , H01L29/20 , C23C16/455
Abstract: A power semiconductor device includes a semiconductor body; a first load terminal at the semiconductor body; and a second load terminal at the semiconductor body. The power semiconductor device is configured to conduct a load current between the first load terminal and the second load terminal. The first load terminal has a first side and a second side adjoining the semiconductor body. The first load terminal includes: at the first side, an atomic layer deposition (ALD) layer; at the second side, a base layer including copper; and between the ALD layer and the base layer, a coupling layer that includes copper-silicon-nitride (CuSiN).
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5.发明申请公开(公告)号：US20170271268A1
公开(公告)日：2017-09-21
申请号：US15458366
申请日：2017-03-14
Applicant: Infineon Technologies AG
Inventor： Frank Hille , Ravi Keshav Joshi , Michael Fugger , Oliver Humbel , Thomas Laska , Matthias Mueller , Roman Roth , Carsten Schaeffer , Hans-Joachim Schulze , Holger Schulze , Juergen Steinbrenner , Frank Umbach
IPC: H01L23/532 , H01L23/522 , H01L21/768 , H01L23/528
CPC classification number: H01L23/53209 , H01L21/76846 , H01L21/76861 , H01L21/76898 , H01L23/485 , H01L23/5226 , H01L23/528 , H01L23/53238
Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.
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公开(公告)号：US08932476B2
公开(公告)日：2015-01-13
申请号：US13762117
申请日：2013-02-07
Applicant: Infineon Technologies AG
Inventor： Thomas Kunstmann , Stefan Willkofer , Anja Gissibl , Johann Strasser , Matthias Mueller , Eva-Maria Hess
CPC classification number: C23F1/02 , C23F1/08 , C23F1/18 , H01L21/32134 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。
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