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    MEMS microphone
    1.
    发明授权
    MEMS microphone 有权

    公开(公告)号：US10589990B2

    公开(公告)日：2020-03-17

    申请号：US16134355

    申请日：2018-09-18

    Applicant: Infineon Technologies AG

    Inventor： Alfons Dehe ,  Ulrich Krumbein ,  Gerhard Metzger-Brueckl ,  Johann Strasser ,  Juergen Wagner ,  Arnaud Walther

    IPC: B81B7/02 ,  H04R19/00 ,  H04R19/04 ,  H04R1/28

    Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state.

    MEMS COMPONENT AND PRODUCTION METHOD FOR A MEMS COMPONENT
    2.
    发明申请
    MEMS COMPONENT AND PRODUCTION METHOD FOR A MEMS COMPONENT 审中-公开

    公开(公告)号：US20190092624A1

    公开(公告)日：2019-03-28

    申请号：US16136986

    申请日：2018-09-20

    Applicant: Infineon Technologies AG

    Inventor： Arnaud Walther ,  Alfons Dehe ,  Gerhard Metzger-Brueckl ,  Johann Strasser

    IPC: B81B7/02 ,  H04R19/04 ,  B81C1/00

    Abstract: A production method for a MEMS component includes providing a layer arrangement on a carrier substrate, where the layer arrangement includes a first and second layer structure. A sacrificial material is arranged in an intermediate region between the first and second layer structures, an etch stop structure extending between the first and second layer structures subdivides the intermediate region into an exposure region and an edge region laterally adjoining the exposure region, and at least one of the first layer structure or the second layer structure has access openings to the exposure region. The method further includes removing the sacrificial material from the exposure region through the access openings using an etching process to expose the exposure region. The etch stop structure provides a lateral delimitation for the etching process, and the sacrificial material present in the edge region provides a mechanical connection between the first and second layer structures.

    Thin MEMS Pump
    4.
    发明申请
    Thin MEMS Pump 有权

    公开(公告)号：US20210040942A1

    公开(公告)日：2021-02-11

    申请号：US16922530

    申请日：2020-07-07

    Applicant: Infineon Technologies AG

    Inventor： Martin Seidl ,  Alfons Dehe ,  Daniel Fruechtl ,  Wolfgang Klein ,  Ulrich Krumbein ,  Johann Strasser ,  Matthias Vobl

    IPC: F04B43/04 ,  F04B53/10

    Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.

    Method for sealing an access opening to a cavity and MEMS component comprising a sealing element
    5.
    发明授权
    Method for sealing an access opening to a cavity and MEMS component comprising a sealing element 有权

    公开(公告)号：US10913656B2

    公开(公告)日：2021-02-09

    申请号：US16162026

    申请日：2018-10-16

    Applicant: Infineon Technologies AG

    Inventor： Gerhard Metzger-Brueckl ,  Alfons Dehe ,  Uwe Hoeckele ,  Johann Strasser ,  Arnaud Walther

    IPC: B81B7/02 ,  B81C1/00

    Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.

    Infrared emitter arrangement and method for producing an infrared emitter arrangement
    6.
    发明授权
    Infrared emitter arrangement and method for producing an infrared emitter arrangement 有权

    公开(公告)号：US10694584B2

    公开(公告)日：2020-06-23

    申请号：US15818835

    申请日：2017-11-21

    Applicant: Infineon Technologies AG

    Inventor： Stephan Pindl ,  Daniel Porwol ,  Johann Strasser

    IPC: G01N21/17 ,  H05B3/00 ,  G02B5/20 ,  G02B5/26

    Abstract: A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.

    Double-membrane MEMS component and production method for a double-membrane MEMS component
    7.
    发明授权
    Double-membrane MEMS component and production method for a double-membrane MEMS component 审中-公开

    公开(公告)号：US10669151B2

    公开(公告)日：2020-06-02

    申请号：US16118055

    申请日：2018-08-30

    Applicant: Infineon Technologies AG

    Inventor： Johann Strasser ,  Alfons Dehe ,  Gerhard Metzger-Brueckl ,  Juergen Wagner ,  Arnaud Walther

    IPC: B81B7/02 ,  B81C1/00 ,  H04R19/04 ,  H04R31/00 ,  H04R19/00 ,  B81B3/00

    Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.

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