公开(公告)号：US20140242374A1

公开(公告)日：2014-08-28

申请号：US13774624

申请日：2013-02-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Johann Strasser ,  Thomas Kunstmann ,  Manfred Frank ,  Werner Robl ,  Maximilian Krug ,  Simon Faiss ,  Matthias Mueller

IPC: H01L23/14 ,  B05D7/00 ,  C25D7/12 ,  B32B3/26

CPC classification number: H01L23/14 ,  B05D7/52 ,  B32B3/26 ,  C23C18/1644 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/50 ,  C25D7/12 ,  C25D7/123 ,  H01L23/3733 ,  H01L23/49866 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/249956 ,  Y10T428/249957 ,  Y10T428/24997 ,  H01L2924/00

Abstract: Various methods, apparatuses and devices relate to porous metal layers on a substrate which are three-dimensionally coated. In one embodiment, a porous metal layer is deposited over a substrate. The porous metal layer can be three-dimensionally coated with a coating material.

Abstract translation: 各种方法，装置和装置涉及三维涂覆在基底上的多孔金属层。 在一个实施例中，多孔金属层沉积在衬底上。 多孔金属层可以用涂料三维涂覆。

公开(公告)号：US09627335B2

公开(公告)日：2017-04-18

申请号：US14272535

申请日：2014-05-08

Applicant: Infineon Technologies AG

Inventor： Stephan Henneck ,  Evelyn Napetschnig ,  Daniel Pedone ,  Bernhard Weidgans ,  Simon Faiss ,  Ivan Nikitin

IPC: H01L21/4763 ,  H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L2224/03424 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/03472 ,  H01L2224/03614 ,  H01L2224/05007 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05558 ,  H01L2224/05583 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01023

Abstract: A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization layer over a semiconductor workpiece; patterning the first metallization layer; and depositing a second metallization layer over the patterned first metallization layer, wherein depositing the second metallization layer includes an electroless deposition process including immersing the patterned first metallization layer in a metal electrolyte.