公开(公告)号：US20170294456A1

公开(公告)日：2017-10-12

申请号：US15436073

申请日：2017-02-17

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L29/51 ,  H01L29/24 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. A material of the first active layer is different than a material of the second active layer, and a hydrogen concentration of the second gate insulator is different from a hydrogen concentration of the first gate insulator.

公开(公告)号：US20210335837A1

公开(公告)日：2021-10-28

申请号：US17368381

申请日：2021-07-06

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A display device having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than the second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

公开(公告)号：US20240258324A1

公开(公告)日：2024-08-01

申请号：US18632631

申请日：2024-04-11

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/02164 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02595 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/518

Abstract: An electronic device is provided. The electronic device includes a substrate, a first active layer, a second active layer, a first gate electrode, a first insulator, a second gate electrode, a second insulator, a first electrode electrically connected to the second active layer, and a second electrode. The first active layer is different from the second active layer in material. The first insulator is disposed between the first active layer and the first gate electrode. The second insulator is disposed between the second active layer and the second gate electrode. The second gate electrode is disposed between the first electrode and the second active layer. The second electrode is overlapped with at least part of the second active layer. The second electrode and the first gate electrode are the same in material.

公开(公告)号：US20200013807A1

公开(公告)日：2020-01-09

申请号：US16571928

申请日：2019-09-16

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L29/24 ,  H01L21/02

Abstract: A display device, and method for manufacture, having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than said second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.