公开(公告)号：US3587000A

公开(公告)日：1971-06-22

申请号：US3587000D

申请日：1968-11-27

Applicant: INT STANDARD ELECTRIC CORP

Inventor： HEEKS JOHN STUART

IPC: G11C11/34 ,  H01L47/00 ,  H03B7/06

CPC classification number: G11C11/34 ,  H01L47/00

Abstract: This is a semiconductor device consisting of a material which exhibits high field instability effects when a potential which exceeds a critical value is applied across the device. Electronic means to vary the conductivity profile along the domain path is provided by having rectifying junctions along the side of the device to vary the minority carrier injections from one or more of the localized PN-junctions.

公开(公告)号：US3869682A

公开(公告)日：1975-03-04

申请号：US45950674

申请日：1974-04-10

Applicant: INT STANDARD ELECTRIC CORP

Inventor： HEEKS JOHN STUART ,  CRISP JOHN JOSIAH

IPC: H03H9/76 ,  G06F7/58 ,  H03H3/08 ,  H03K3/78 ,  H03C3/28 ,  H03K13/00

CPC classification number: G06F7/584 ,  G06F2207/581 ,  G06F2207/583

Abstract: There is disclosed a phase shift modulated pseudo-noise code generator. This generator employs a surface acoustic wave tapped delay line with feedback. A radio frequency phase reference signal is provided at the tapping points. The radio frequency phase of the modulated carrier is compared with the radio frequency phase of the reference signal at each tapping point from which the feedback is derived. The comparison is performed in a surface acoustic wave modulo-2 adder. This comparison overcomes the phase shift due to temperature effects.

Abstract translation: 公开了一种相移调制伪噪声码发生器。 该发生器采用具有反馈的表面声波抽头延迟线。 在射出点处提供射频相位参考信号。 将调制载波的射频相位与来自反馈的每个分接点处的参考信号的射频相位进行比较。 比较在表面声波模2加法器中进行。 该比较克服了由温度影响引起的相移。

公开(公告)号：US3626217A

公开(公告)日：1971-12-07

申请号：US3626217D

申请日：1966-11-30

Applicant: INT STANDARD ELECTRIC CORP

Inventor： SANDBANK CARL PETER ,  HEEKS JOHN STUART ,  STORTFORD BISHOP S ,  FEUELL EDWARD ALBERT

IPC: H01L47/00 ,  H03K3/02 ,  H01L9/00

CPC classification number: H03K3/02 ,  H01L47/00

Abstract: A solid-state device comprising a specimen of multivalley semiconductor material and electric field applying means connected to ohmic contacts attached at one surface of the specimen. The semiconductor material has the innate property of being responsive to electric fields in excess of a critical intensity to cause a redistribution of electric fields so as to nucleate a high electric field region, or domain, and responsive to electric fields in excess of a sustaining intensity, to propagate such high electric field region. A field-sustaining point whereat the electric field intensity is less than a sustaining intensity is defined along an intermediate portion of the specimen. High electric field regions are nucleated and propagated in cyclic fashion such that current through the specimen varies periodically in time in the form of coherent oscillations. The location of the field-sustaining point and, therefore, the frequency of the coherent oscillations in the specimen is continuously controlled by the voltage applied across the ohmic contacts.

公开(公告)号：US3422364A

公开(公告)日：1969-01-14

申请号：US3422364D

申请日：1965-05-06

Applicant: INT STANDARD ELECTRIC CORP

Inventor： CRAVEN GEORGE FREDERICK ,  HEEKS JOHN STUART ,  WOODE ALAN DAVID

IPC: H03K3/33 ,  H03K7/08 ,  H04B14/02 ,  H03K9/08 ,  H03D9/02 ,  H03K5/20

CPC classification number: H03K7/08 ,  H03K3/33 ,  H04B14/026