公开(公告)号：US20190237404A1

公开(公告)日：2019-08-01

申请号：US16382414

申请日：2019-04-12

Applicant: INTEL CORPORATION

Inventor： BERNHARD SELL ,  OLEG GOLONZKA

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/08 ,  H01L23/528 ,  H01L27/088 ,  H01L21/28 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L23/522 ,  H01L23/485

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.

公开(公告)号：US20170141039A1

公开(公告)日：2017-05-18

申请号：US15419141

申请日：2017-01-30

Applicant: INTEL CORPORATION

Inventor： BERNHARD SELL ,  OLEG GOLONZKA

IPC: H01L23/535 ,  H01L23/528 ,  H01L21/768 ,  H01L27/088 ,  H01L29/417 ,  H01L21/28 ,  H01L21/8234 ,  H01L23/532

CPC classification number: H01L23/535 ,  H01L21/28052 ,  H01L21/28123 ,  H01L21/76805 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53266 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/4175 ,  H01L29/4925 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.

公开(公告)号：US20180315710A1

公开(公告)日：2018-11-01

申请号：US15925151

申请日：2018-03-19

Applicant: INTEL CORPORATION

Inventor： BERNHARD SELL ,  OLEG GOLONZKA

IPC: H01L23/535 ,  H01L23/532 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/08 ,  H01L23/528 ,  H01L27/088 ,  H01L21/28 ,  H01L29/417 ,  H01L23/485 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L23/522

CPC classification number: H01L23/535 ,  H01L21/28052 ,  H01L21/28123 ,  H01L21/76805 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53266 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/4175 ,  H01L29/4925 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a structure comprising a first contact metal disposed on a source/drain contact of a substrate, and a second contact metal disposed on a top surface of the first contact metal, wherein the second contact metal is disposed within an ILD disposed on a top surface of a metal gate disposed on the substrate.