公开(公告)号：US11626451B2

公开(公告)日：2023-04-11

申请号：US16442767

申请日：2019-06-17

Applicant: INTEL CORPORATION

Inventor： Emily Walker ,  Carl H. Naylor ,  Kaan Oguz ,  Kevin L. Lin ,  Tanay Gosavi ,  Christopher J. Jezewski ,  Chia-Ching Lin ,  Benjamin W. Buford ,  Dmitri E. Nikonov ,  John J. Plombon ,  Ian A. Young ,  Noriyuki Sato

IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.