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公开(公告)号：US11626451B2
公开(公告)日：2023-04-11
申请号：US16442767
申请日：2019-06-17
Applicant: INTEL CORPORATION
Inventor： Emily Walker , Carl H. Naylor , Kaan Oguz , Kevin L. Lin , Tanay Gosavi , Christopher J. Jezewski , Chia-Ching Lin , Benjamin W. Buford , Dmitri E. Nikonov , John J. Plombon , Ian A. Young , Noriyuki Sato
Abstract: A magnetic memory device comprising a plurality of memory cells is disclosed. The memory device includes an array of memory cells where each memory cell includes a first material layer having a ferromagnetic material, a second material layer having ruthenium, and a third material layer having bismuth and/or antimony. The second material layer is sandwiched between the first material layer and the third material in a stacked configuration.
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公开(公告)号：US11683939B2
公开(公告)日：2023-06-20
申请号：US16396451
申请日：2019-04-26
Applicant: Intel Corporation
Inventor： Benjamin Buford , Angeline Smith , Noriyuki Sato , Tanay Gosavi , Kaan Oguz , Christopher Wiegand , Kevin O'Brien , Tofizur Rahman , Gary Allen , Sasikanth Manipatruni , Emily Walker
Abstract: A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.
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公开(公告)号：US20200343301A1
公开(公告)日：2020-10-29
申请号：US16396451
申请日：2019-04-26
Applicant: Intel Corporation
Inventor： Benjamin Buford , Angeline Smith , Noriyuki Sato , Tanay Gosavi , Kaan Oguz , Christopher Wiegand , Kevin O'Brien , Tofizur Rahman , Gary Allen , Sasikanth Manipatruni , Emily Walker
Abstract: A memory apparatus includes a first electrode having a spin orbit material. The memory apparatus further includes a first memory device on a portion of the first electrode and a first dielectric adjacent to a sidewall of the first memory device. The memory apparatus further includes a second memory device on a portion of the first electrode and a second dielectric adjacent to a sidewall of the second memory device. A second electrode is on and in contact with a portion of the first electrode, where the second electrode is between the first memory device and the second memory device. The second electrode has a lower electrical resistance than an electrical resistance of the first electrode. The memory apparatus further includes a first interconnect structure and a second interconnect, each coupled with the first electrode.
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公开(公告)号：US20230086080A1
公开(公告)日：2023-03-23
申请号：US17482131
申请日：2021-09-22
Applicant: Intel Corporation
Inventor： Chia-Ching Lin , Dmitri Evgenievich Nikonov , Ian Alexander Young , John J. Plombon , Hai Li , Kaan Oguz , Tanay A. Gosavi , Emily Walker
Abstract: In one embodiment, an apparatus includes a magnet, a first structure, and a second structure. The first structure includes a first conductive trace and a magnetoelectric material. The first conductive trace is coupled to an input voltage terminal, and the magnetoelectric material is coupled to the first conductive trace and the magnet. The second structure includes a superlattice structure and a second conductive trace. The superlattice structure includes one or more topological insulator materials. Moreover, the superlattice structure is coupled to the magnet and the second conductive trace, and the second conductive trace is coupled to an output voltage terminal.
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