Fin smoothing and integrated circuit structures resulting therefrom

    公开(公告)号:US12021149B2

    公开(公告)日:2024-06-25

    申请号:US18143549

    申请日:2023-05-04

    CPC classification number: H01L29/7853 H01L29/165 H01L29/66818 H01L29/7851

    Abstract: Fin smoothing, and integrated circuit structures resulting therefrom, are described. For example, an integrated circuit structure includes a semiconductor fin having a protruding fin portion above an isolation structure, the protruding fin portion having substantially vertical sidewalls. The semiconductor fin further includes a sub-fin portion within an opening in the isolation structure, the sub-fin portion having a different semiconductor material than the protruding fin portion. The sub-fin portion has a width greater than or less than a width of the protruding portion where the sub-fin portion meets the protruding portion. A gate stack is over and conformal with the protruding fin portion of the semiconductor fin. A first source or drain region at a first side of the gate stack, and a second source or drain region at a second side of the gate stack opposite the first side of the gate stack.

    Channel structures with sub-fin dopant diffusion blocking layers

    公开(公告)号:US11521968B2

    公开(公告)日:2022-12-06

    申请号:US16024671

    申请日:2018-06-29

    Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having channel structures with sub-fin dopant diffusion blocking layers are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. The lower fin portion includes a dopant diffusion blocking layer on a first semiconductor layer doped to a first conductivity type. The upper fin portion includes a portion of a second semiconductor layer, the second semiconductor layer on the dopant diffusion blocking layer. An isolation structure is along sidewalls of the lower fin portion. A gate stack is over a top of and along sidewalls of the upper fin portion, the gate stack having a first side opposite a second side. A first source or drain structure at the first side of the gate stack.

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