公开(公告)号：US20170011929A1

公开(公告)日：2017-01-12

申请号：US15120720

申请日：2014-09-24

Applicant: INTEL CORPORATION

Inventor： Kimin JUN ,  Patrick MORROW ,  Donald NELSON

IPC: H01L21/308 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/3086 ,  H01L21/3081 ,  H01L21/76802 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827

Abstract: A grid comprising a first set of grid lines and a second set of grid lines is formed on a substrate using a first lithography process. At least one of the first set of grid lines and the second set of grid lines are selectively patterned to define a vertical device feature using a second lithography process.

Abstract translation: 使用第一光刻工艺在衬底上形成包括第一组栅格线和第二组栅格线的栅格。 第一组栅格线和第二组栅格线中的至少一个被选择性地图案化以使用第二光刻工艺限定垂直器件特征。