公开(公告)号：US20170092846A1

公开(公告)日：2017-03-30

申请号：US15126682

申请日：2014-07-07

Applicant: INTEL CORPORATION

Inventor： BRIAN S. DOYLE ,  KAAN OGUZ ,  CHARLES C. KUO ,  MARK L. DOCZY ,  SATYARTH SURI ,  DAVID L. KENCKE ,  ROBERT S. CHAU ,  ROKSANA GOLIZADEH MOJARAD

IPC: H01L43/08 ,  H01L43/12 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C2213/52 ,  H01L27/222 ,  H01L43/12

Abstract: Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.

公开(公告)号：US20190109281A1

公开(公告)日：2019-04-11

申请号：US16214306

申请日：2018-12-10

Applicant: INTEL CORPORATION

Inventor： BRIAN S. DOYLE ,  KAAN OGUZ ,  CHARLES C. KUO ,  MARK L. DOCZY ,  SATYARTH SURI ,  DAVID L. KENCKE ,  ROBERT S. CHAU ,  ROKSANA GOLIZADEH MOJARAD

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C2213/52 ,  H01L27/222 ,  H01L43/12

Abstract: Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.

公开(公告)号：US20160351238A1

公开(公告)日：2016-12-01

申请号：US15116457

申请日：2014-03-26

Applicant: INTEL CORPORATION

Inventor： BRIAN S. DOYLE ,  DAVID L. KENCKE ,  KAAN OGUZ ,  MARK L. DOCZY ,  SATYARTH SURI ,  ROBERT S. CHAU ,  CHARLES C. KUO ,  ROKSANA GOLIZADEH MOJARAD

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Techniques are disclosed for forming a spin-transfer torque memory (STTM) element having an annular contact to reduce critical current requirements. The techniques reduce critical current requirements for a given magnetic tunnel junction (MTJ), because the annular contact reduces contact size and increases local current density, thereby reducing the current needed to switch the direction of the free magnetic layer of the MTJ. In some cases, the annular contact surrounds at least a portion of an insulator layer that prevents the passage of current. In such cases, current flows through the annular contact and around the insulator layer to increase the local current density before flowing through the free magnetic layer. The insulator layer may comprise a dielectric material, and in some cases, is a tunnel material, such as magnesium oxide (MgO). In some cases, a critical current reduction of at least 10% is achieved for a given MTJ.

Abstract translation: 公开了用于形成具有环形接触的自旋转移力矩存储器（STTM）元件以减少临界电流要求的技术。 该技术降低给定磁性隧道结（MTJ）的临界电流要求，因为环形接触可以减小接触尺寸并增加局部电流密度，从而减少切换MTJ自由磁性层方向所需的电流。 在一些情况下，环形触点围绕防止电流通过的绝缘体层的至少一部分。 在这种情况下，电流流过环形触点并且在绝缘体层周围流动，以在流过自由磁性层之前增加局部电流密度。 绝缘体层可以包括介电材料，并且在一些情况下，是隧道材料，例如氧化镁（MgO）。 在某些情况下，对于给定的MTJ，实现至少10％的临界电流降低。

公开(公告)号：US20200206635A1

公开(公告)日：2020-07-02

申请号：US16233372

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： ROKSANA GOLIZADEH MOJARAD ,  AMIN HEYDARPOUR ,  SELVADUMAR PANEER ,  RAHULDEVA GHOSH

IPC: A63F13/75 ,  A63F13/71 ,  A63F13/79 ,  G06F21/16 ,  H04L9/08

Abstract: Embodiments described herein provide an apparatus comprising a processor to receive, from a gaming/anti-cheating server, a message comprising a first pixel data set comprising first pixel data for one or more pixels of a watermark generated by the gaming/anti-cheating server, store the first pixel data set in the machine-readable memory, receive, from a gaming system, a frame buffer rendered by the gaming system and comprising the watermark generated by the gaming/anti-cheating server, isolate, from the frame buffer, a second pixel data set comprising second pixel data for one or more pixels corresponding to the first pixel set, and forward an alert to the gaming/anti-cheating server when the second pixel data differs from the first pixel data by an amount that exceeds a threshold. Other embodiments may be described and claimed.

公开(公告)号：US20160126452A1

公开(公告)日：2016-05-05

申请号：US14992601

申请日：2016-01-11

Applicant: INTEL CORPORATION

Inventor： CHARLES C. KUO ,  BRIAN S. DOYLE ,  Arijit Raychowdhury ,  ROKSANA GOLIZADEH MOJARAD ,  KAAN OGUZ

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: Techniques are disclosed for enhancing performance of a perpendicular magnetic tunnel junction (MTJ) by implementing an additional ferromagnetic layer therein. The additional ferromagnetic layer can be implemented, for example, in or otherwise proximate either the fixed ferromagnetic layer or the free ferromagnetic layer of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is implemented with a non-magnetic spacer, wherein the thickness of the additional ferromagnetic layer and/or spacer can be adjusted to sufficiently balance the energy barrier between parallel and anti-parallel states of the perpendicular MTJ. In some embodiments, the additional ferromagnetic layer is configured such that its magnetization is opposite that of the fixed ferromagnetic layer.

Abstract translation: 公开了通过在其中实现附加铁磁层来增强垂直磁隧道结（MTJ）的性能的技术。 附加铁磁层可以例如在垂直MTJ的固定铁磁层或自由铁磁层中或以其它方式实现。 在一些实施例中，附加铁磁层用非磁性间隔件实现，其中可以调整附加铁磁层和/或间隔物的厚度以使垂直MTJ的平行和反平行状态之间的能量势垒充分平衡。 在一些实施例中，附加铁磁层被配置为使得其磁化强度与固定铁磁层的磁化强度相反。