公开(公告)号：US20180240969A1

公开(公告)日：2018-08-23

申请号：US15753478

申请日：2015-09-18

Applicant: INTEL CORPORATION

Inventor： MARK L. DOCZY ,  BRIAN S. DOYLE ,  CHARLES C. KUO ,  KAAN OGUZ ,  KEVIN P. O'BRIEN ,  SATYARTH SURI ,  TEJASWI K. INDUKURI

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Technologies for manufacturing spin transfer torque memory (STTM) elements are disclosed. In some embodiments, the technologies include methods for interrupting the electrical continuity of a re-deposited layer that may form on one or more sidewalls of an STTM element during its formation. Devices and systems including such STTM elements are also described.

公开(公告)号：US20190109281A1

公开(公告)日：2019-04-11

申请号：US16214306

申请日：2018-12-10

Applicant: INTEL CORPORATION

Inventor： BRIAN S. DOYLE ,  KAAN OGUZ ,  CHARLES C. KUO ,  MARK L. DOCZY ,  SATYARTH SURI ,  DAVID L. KENCKE ,  ROBERT S. CHAU ,  ROKSANA GOLIZADEH MOJARAD

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C2213/52 ,  H01L27/222 ,  H01L43/12

Abstract: Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.

公开(公告)号：US20160351238A1

公开(公告)日：2016-12-01

申请号：US15116457

申请日：2014-03-26

Applicant: INTEL CORPORATION

Inventor： BRIAN S. DOYLE ,  DAVID L. KENCKE ,  KAAN OGUZ ,  MARK L. DOCZY ,  SATYARTH SURI ,  ROBERT S. CHAU ,  CHARLES C. KUO ,  ROKSANA GOLIZADEH MOJARAD

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: Techniques are disclosed for forming a spin-transfer torque memory (STTM) element having an annular contact to reduce critical current requirements. The techniques reduce critical current requirements for a given magnetic tunnel junction (MTJ), because the annular contact reduces contact size and increases local current density, thereby reducing the current needed to switch the direction of the free magnetic layer of the MTJ. In some cases, the annular contact surrounds at least a portion of an insulator layer that prevents the passage of current. In such cases, current flows through the annular contact and around the insulator layer to increase the local current density before flowing through the free magnetic layer. The insulator layer may comprise a dielectric material, and in some cases, is a tunnel material, such as magnesium oxide (MgO). In some cases, a critical current reduction of at least 10% is achieved for a given MTJ.

Abstract translation: 公开了用于形成具有环形接触的自旋转移力矩存储器（STTM）元件以减少临界电流要求的技术。 该技术降低给定磁性隧道结（MTJ）的临界电流要求，因为环形接触可以减小接触尺寸并增加局部电流密度，从而减少切换MTJ自由磁性层方向所需的电流。 在一些情况下，环形触点围绕防止电流通过的绝缘体层的至少一部分。 在这种情况下，电流流过环形触点并且在绝缘体层周围流动，以在流过自由磁性层之前增加局部电流密度。 绝缘体层可以包括介电材料，并且在一些情况下，是隧道材料，例如氧化镁（MgO）。 在某些情况下，对于给定的MTJ，实现至少10％的临界电流降低。

公开(公告)号：US20170092846A1

公开(公告)日：2017-03-30

申请号：US15126682

申请日：2014-07-07

Applicant: INTEL CORPORATION

Inventor： BRIAN S. DOYLE ,  KAAN OGUZ ,  CHARLES C. KUO ,  MARK L. DOCZY ,  SATYARTH SURI ,  DAVID L. KENCKE ,  ROBERT S. CHAU ,  ROKSANA GOLIZADEH MOJARAD

IPC: H01L43/08 ,  H01L43/12 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C2213/52 ,  H01L27/222 ,  H01L43/12

Abstract: Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.

公开(公告)号：US20160359101A1

公开(公告)日：2016-12-08

申请号：US15117605

申请日：2014-03-28

Applicant: INTEL CORPORATION

Inventor： CHARLES C. KUO ,  KAAN OGUZ ,  BRIAN S. DOYLE ,  MARK L. DOCZY ,  DAVID L. KENCKE ,  SATYARTH SURI ,  ROBERT S. CHAU

IPC: H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/12

Abstract: Techniques are disclosed for fabricating a self-aligned spin-transfer torque memory (STTM) device with a dot-contacted free magnetic layer. In some embodiments, the disclosed STTM device includes a first dielectric spacer covering sidewalls of an electrically conductive hardmask layer that is patterned to provide an electronic contact for the STTM's free magnetic layer. The hardmask contact can be narrower than the free magnetic layer. The first dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer. In some embodiments, the STTM further includes an optional second dielectric spacer covering sidewalls of its free magnetic layer. The second dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer and may serve, at least in part, to protect the sidewalls of the free magnetic layer from redepositing of etch byproducts during such patterning, thereby preventing electrical shorting between the fixed magnetic layer and the free magnetic layer.

Abstract translation: 公开了用于制造具有点接触自由磁性层的自对准自旋转移转矩存储器（STTM）装置的技术。 在一些实施例中，所公开的STTM装置包括覆盖导电硬掩模层的侧壁的第一介电间隔物，其被图案化以提供用于STTM自由磁性层的电子接触。 硬掩模接触可以比自由磁性层更窄。 第一介电间隔物可用于图案化STTM的固定磁性层。 在一些实施例中，STTM还包括覆盖其自由磁性层的侧壁的任选的第二电介质间隔物。 第二电介质间隔物可以用于图案化STTM的固定磁性层，并且可以至少部分地用于保护自由磁性层的侧壁在这种图案化期间重新沉积蚀刻副产物，从而防止固定磁性层 和自由磁性层。