公开(公告)号：US20150348833A1

公开(公告)日：2015-12-03

申请号：US14807480

申请日：2015-07-23

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/321

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 可以使用包含HF和HCl的混合物的湿式蚀刻溶液来相对于衬垫材料选择性地蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹陷在1.5和 2 nm。

公开(公告)号：US09343408B2

公开(公告)日：2016-05-17

申请号：US14075228

申请日：2013-11-08

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L23/532 ,  H01L21/3213 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26

CPC classification number: H01L23/5329 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比内衬更凹入，以进一步增强保护。 包括HF和H 2 SO 4的混合物的湿蚀刻溶液可用于相对于衬垫材料选择性蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹入1.5和 2 nm。

公开(公告)号：US20150255340A1

公开(公告)日：2015-09-10

申请号：US14202268

申请日：2014-03-10

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 可以使用包含HF和HCl的混合物的湿式蚀刻溶液来相对于衬垫材料选择性地蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹陷在1.5和 2 nm。

公开(公告)号：US20150130065A1

公开(公告)日：2015-05-14

申请号：US14075228

申请日：2013-11-08

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5329 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 包括HF和H 2 SO 4的混合物的湿蚀刻溶液可用于相对于衬垫材料选择性蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹入1.5和 2 nm。

公开(公告)号：US09224639B2

公开(公告)日：2015-12-29

申请号：US14807480

申请日：2015-07-23

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/461 ,  H01L21/768 ,  H01L21/321 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

公开(公告)号：US09123785B1

公开(公告)日：2015-09-01

申请号：US14202268

申请日：2014-03-10

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

Abstract translation: 可以选择性地对Ta / TaN阻挡衬垫和SiC硬掩模层进行蚀刻，例如，以减少潜在的铜污染。 铜膜可以比衬垫更凹入，以进一步增强保护。 可以使用包含HF和HCl的混合物的湿式蚀刻溶液来相对于衬垫材料选择性地蚀刻铜，例如，铜膜可以凹陷在2和3nm之间，并且阻挡衬里膜可以凹陷在1.5和 2 nm。

公开(公告)号：US09012322B2

公开(公告)日：2015-04-21

申请号：US13857696

申请日：2013-04-05

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/3213 ,  C23F1/34

CPC classification number: H01L21/76841 ,  C23F1/34 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76883

Abstract: Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures.

Abstract translation: 导电金属（例如铜）和金属氮化物（例如，氮化钽）的湿式蚀刻溶液可以被调谐以差别蚀刻导电金属和金属氮化物，同时对附近的氧化物（例如，二氧化硅硬掩模材料）具有非常小的影响， ，并以中等速率蚀刻难熔金属（例如钽）。 溶液是加入足够的氢氟酸（HF）以使溶液的pH约为8-10的碱性水溶液（例如，过氧化铵混合物或TMAH-过氧化物混合物）。 应用包括亚微米逻辑结构的金属化。

公开(公告)号：US20140302671A1

公开(公告)日：2014-10-09

申请号：US13857696

申请日：2013-04-05

Applicant: INTERMOLECULAR INC.

Inventor： Anh Duong ,  Errol Todd Ryan

IPC: H01L21/768 ,  H01L21/306

CPC classification number: H01L21/76841 ,  C23F1/34 ,  H01L21/32134 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76883

Abstract: Wet-etch solutions for conductive metals (e.g., copper) and metal nitrides (e.g., tantalum nitride) can be tuned to differentially etch the conductive metals and metal nitrides while having very little effect on nearby oxides (e.g., silicon dioxide hard mask materials), and etching refractory metals (e.g. tantalum) at an intermediate rate. The solutions are aqueous base solutions (e.g., ammonia-peroxide mixture or TMAH-peroxide mixture) with just enough hydrofluoric acid (HF) added to make the solution's pH about 8-10. Applications include metallization of sub-micron logic structures.

Abstract translation: 导电金属（例如铜）和金属氮化物（例如，氮化钽）的湿式蚀刻溶液可以被调谐以差别蚀刻导电金属和金属氮化物，同时对附近的氧化物（例如，二氧化硅硬掩模材料）具有非常小的影响， ，并以中等速率蚀刻难熔金属（例如钽）。 溶液是加入足够的氢氟酸（HF）以使溶液的pH约为8-10的碱性水溶液（例如，过氧化铵混合物或TMAH-过氧化物混合物）。 应用包括亚微米逻辑结构的金属化。