公开(公告)号：US20230189656A1

公开(公告)日：2023-06-15

申请号：US17643594

申请日：2021-12-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： SABA ZARE ,  MICHAEL RIZZOLO ,  THEODORUS E. STANDAERT ,  ALEXANDER REZNICEK

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L25/065

CPC classification number: H01L43/08 ,  H01L27/226 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L25/0657

Abstract: A semiconductor device is provided. The semiconductor device includes a first electrode; an MRAM stack formed on the first electrode; a hardmask structure formed on the MRAM stack; a conductive etch stop layer formed around the hardmask structure; and a second electrode formed on the hardmask structure.

公开(公告)号：US20230189534A1

公开(公告)日：2023-06-15

申请号：US17644098

申请日：2021-12-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ASHIM DUTTA ,  MICHAEL RIZZOLO ,  JON SLAUGHTER ,  CHIH-CHAO YANG ,  THEODORUS E. STANDAERT

IPC: H01L27/22 ,  H01L43/12

CPC classification number: H01L27/222 ,  H01L43/12 ,  H01L43/02

Abstract: An MRAM device is provided. The MRAM device includes a first dielectric cap layer formed on an underlying layer, a second dielectric cap layer formed on the first dielectric cap layer, the first dielectric cap layer including a lower-κ material than that of the second dielectric cap layer. The MRAM device also includes a bottom electrode contact (BEC) formed through the first dielectric cap layer and the second dielectric cap layer, an MRAM stack formed on the BEC, and wherein the second dielectric cap layer surrounds an upper portion of the BEC.