公开(公告)号：US20140256133A1

公开(公告)日：2014-09-11

申请号：US13786970

申请日：2013-03-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Vamsi Devarapalli ,  Colin J. Goyette ,  Michael R. Kennett ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  James J. Steffes ,  Adam D. Ticknor ,  Wei-tsu Tseng

IPC: H01L21/02

CPC classification number: H01L21/02068 ,  H01L21/02074 ,  H01L21/76883

Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

Abstract translation: 提供了一种用于先进互连技术的后金属化学 - 机械平面化（CMP）清洁工艺。 遵循CMP的方法依次组合了酸性清洁剂和碱性清洁剂。 相对于全基础清洁工艺，该方法可以实现CMP缺陷的减少60％以上，例如抛光残渣，异物，浆料磨料，划痕和中空金属。 该过程还消除了在辊刷清洁模块内的辊刷清洁过程中间歇性发生的圆环缺陷。

公开(公告)号：US08920567B2

公开(公告)日：2014-12-30

申请号：US13786970

申请日：2013-03-06

Applicant: International Business Machines Corporation

Inventor： Vamsi Devarapalli ,  Colin J. Goyette ,  Michael R. Kennett ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  James J. Steffes ,  Adam D. Ticknor ,  Wei-tsu Tseng

IPC: B08B6/00 ,  B08B7/00 ,  C25F1/00 ,  C25F3/30 ,  H01L21/02

CPC classification number: H01L21/02068 ,  H01L21/02074 ,  H01L21/76883

Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

Abstract translation: 提供了一种用于先进互连技术的后金属化学 - 机械平面化（CMP）清洁工艺。 遵循CMP的方法依次组合了酸性清洁剂和碱性清洁剂。 相对于全基础清洁工艺，该方法可以实现CMP缺陷的减少60％以上，例如抛光残渣，异物，浆料磨料，划痕和中空金属。 该过程还消除了在辊刷清洁模块内的辊刷清洁过程中间歇性发生的圆环缺陷。