Apparatus for adjusting coolant flow resistance through liquid-cooled electronics racks
    3.
    发明授权
    Apparatus for adjusting coolant flow resistance through liquid-cooled electronics racks 有权
    用于通过液冷电子机架调节冷却剂流阻的装置

    公开(公告)号:US09386727B2

    公开(公告)日:2016-07-05

    申请号:US13795010

    申请日:2013-03-12

    Abstract: Flow restrictors are employed in association with multiple heat exchange tube sections of a heat exchange assembly, or in association with multiple coolant supply lines or coolant return lines feeding multiple heat exchange assemblies. Flow restrictors associated with respective heat exchange tube sections (or respective heat exchange assemblies) are disposed at the coolant channel inlet or coolant channel outlet of the tube sections (or of the heat exchange assemblies). These flow restrictors tailor coolant flow resistance through the heat exchange tube sections or through the heat exchange assemblies to control overall heat transfer within the tube sections or across heat exchange assemblies. In one embodiment, the flow restrictors tailor a coolant flow distribution differential across multiple heat exchange tube sections or across multiple heat exchange assemblies.

    Abstract translation: 流量限制器与热交换组件的多个热交换管部分相关联或者与多个冷却剂供应管线或供给多个热交换组件的冷却剂返回管路相关联地被使用。 与相应的热交换管部分(或相应的热交换组件)相关联的流量限制器设置在管部分(或热交换组件)的冷却剂通道入口或冷却剂通道出口处。 这些流量限制器通过热交换管部分或通过热交换组件来调节冷却剂流动阻力,以控制管段内部或热交换组件内的总体热传递。 在一个实施例中,流量限制器定制跨越多个热交换管部分或跨多个热交换组件的冷却剂流量分配差。

    POST METAL CHEMICAL-MECHANICAL PLANARIZATION CLEANING PROCESS
    4.
    发明申请
    POST METAL CHEMICAL-MECHANICAL PLANARIZATION CLEANING PROCESS 有权
    后金属化学机械平面清洁过程

    公开(公告)号:US20140256133A1

    公开(公告)日:2014-09-11

    申请号:US13786970

    申请日:2013-03-06

    CPC classification number: H01L21/02068 H01L21/02074 H01L21/76883

    Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

    Abstract translation: 提供了一种用于先进互连技术的后金属化学 - 机械平面化(CMP)清洁工艺。 遵循CMP的方法依次组合了酸性清洁剂和碱性清洁剂。 相对于全基础清洁工艺,该方法可以实现CMP缺陷的减少60%以上,例如抛光残渣,异物,浆料磨料,划痕和中空金属。 该过程还消除了在辊刷清洁模块内的辊刷清洁过程中间歇性发生的圆环缺陷。

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