公开(公告)号：US11165429B2

公开(公告)日：2021-11-02

申请号：US16831241

申请日：2020-03-26

Applicant: International Business Machines Corporation

Inventor： Andreas Fuhrer Janett ,  Fabrizio Nichele ,  Markus Fabian Ritter ,  Heike Erika Riel

IPC: H03K19/195 ,  G06N10/00 ,  H03K17/92 ,  H01L39/22

Abstract: The invention is notably directed to a method of operating a superconducting channel. The method relies on a device including: a potentially superconducting material; a gate electrode; and an electrically insulating medium. A channel is defined by the potentially superconducting material. The gate electrode positioned adjacent to the channel, such that an end surface of the gate electrode faces a portion of the channel. The electrically insulating medium is arranged in such a manner that it electrically insulates the gate electrode from the channel. Rendering the channel superconducting by cooling down the device. Next, a voltage difference is applied between the gate electrode and the channel to inject electrons in the channel through the electrically insulating medium and thereby generate a gate current between the gate electrode and the channel. The electrons are injected with an average energy sufficient to modify a critical current IC of the channel.

公开(公告)号：US20230033374A1

公开(公告)日：2023-02-02

申请号：US17387625

申请日：2021-07-28

Applicant: International Business Machines Corporation

Inventor： Markus Fabian Ritter ,  Fabrizio Nichele ,  Heinz Schmid ,  Heike Erika Riel

IPC: H01L21/02 ,  H01L29/06

Abstract: Embodiments of the invention relate to a method for fabricating a semiconductor structure comprising a semiconductor material, and a semiconductor substrate fabricated from the method. The method can include a step of providing a template structure. The template structure can comprise an opening, a cavity and a seed structure. The seed structure can comprise a seed material and a seed surface. An inner surface of the template structure can comprise at least one metallic surface area comprising a metallic material. The embodied method further comprises a step of growing the semiconductor structure within the cavity of the template structure from the seed surface along the metallic surface area.

公开(公告)号：US12094760B2

公开(公告)日：2024-09-17

申请号：US17089136

申请日：2020-11-04

Applicant: International Business Machines Corporation

Inventor： Markus Fabian Ritter ,  Fabrizio Nichele ,  Heinz Schmid ,  Heike Erika Riel

IPC: H01L21/76 ,  H01L21/311 ,  H01L21/762

CPC classification number: H01L21/76264 ,  H01L21/31105

Abstract: Techniques that can facilitate high-transparency semiconductor-metal interfaces are provided. In one example, a method can comprise forming a silicon on insulator (SOI) over a wafer. The method can further comprise depositing a metal on the SOI. The method can further comprise forming a structure by dry-etching the metal and dry-etching the SOI. The method can further comprise forming a template over the structure. The method can further comprise etching a portion of the SOI for removal under the metal. The method can further comprise growing a semiconductor where the portion of SOI was removed.

公开(公告)号：US20220139770A1

公开(公告)日：2022-05-05

申请号：US17089136

申请日：2020-11-04

Applicant: International Business Machines Corporation

Inventor： Markus Fabian Ritter ,  Fabrizio Nichele ,  Heinz Schmid ,  Heike Erika Riel

IPC: H01L21/762 ,  H01L21/311

Abstract: Techniques that can facilitate high-transparency semiconductor-metal interfaces are provided. In one example, a method can comprise forming a silicon on insulator (SOI) over a wafer. The method can further comprise depositing a metal on the SOI. The method can further comprise forming a structure by dry-etching the metal and dry-etching the SOI. The method can further comprise forming a template over the structure. The method can further comprise etching a portion of the SOI for removal under the metal. The method can further comprise growing a semiconductor where the portion of SOI was removed.

公开(公告)号：US20210305987A1

公开(公告)日：2021-09-30

申请号：US16831241

申请日：2020-03-26

Applicant: International Business Machines Corporation

Inventor： Andreas Fuhrer Janett ,  Fabrizio Nichele ,  Markus Fabian Ritter ,  Heike Erika Riel

IPC: H03K19/195 ,  H01L39/22 ,  H03K17/92 ,  G06N10/00

Abstract: The invention is notably directed to a method of operating a superconducting channel. The method relies on a device including: a potentially superconducting material; a gate electrode; and an electrically insulating medium. A channel is defined by the potentially superconducting material. The gate electrode positioned adjacent to the channel, such that an end surface of the gate electrode faces a portion of the channel. The electrically insulating medium is arranged in such a manner that it electrically insulates the gate electrode from the channel. Rendering the channel superconducting by cooling down the device. Next, a voltage difference is applied between the gate electrode and the channel to inject electrons in the channel through the electrically insulating medium and thereby generate a gate current between the gate electrode and the channel. The electrons are injected with an average energy sufficient to modify a critical current IC of the channel.

公开(公告)号：US20230320235A1

公开(公告)日：2023-10-05

申请号：US17707898

申请日：2022-03-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Matthias Mergenthaler ,  Fabrizio Nichele ,  Markus Fabian Ritter

IPC: H01L39/22 ,  H01L39/24

CPC classification number: H01L39/228 ,  H01L39/223 ,  H01L39/2493

Abstract: A superconductor device includes a substrate. There is a first silicide and a second silicide located on opposite sides of a silicon channel and on top of the substrate. A first superconducting contact is in contact with the first silicide. A second superconducting contact is in contact with the second silicide. A dielectric is located between the first and second superconducting contacts. A gate is on top of the gate dielectric.

公开(公告)号：US11776809B2

公开(公告)日：2023-10-03

申请号：US17387625

申请日：2021-07-28

Applicant: International Business Machines Corporation

Inventor： Markus Fabian Ritter ,  Fabrizio Nichele ,  Heinz Schmid ,  Heike Erika Riel

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02603 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/0665

Abstract: Embodiments of the invention relate to a method for fabricating a semiconductor structure comprising a semiconductor material, and a semiconductor substrate fabricated from the method. The method can include a step of providing a template structure. The template structure can comprise an opening, a cavity and a seed structure. The seed structure can comprise a seed material and a seed surface. An inner surface of the template structure can comprise at least one metallic surface area comprising a metallic material. The embodied method further comprises a step of growing the semiconductor structure within the cavity of the template structure from the seed surface along the metallic surface area.