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1.发明申请公开(公告)号：US20020190253A1
公开(公告)日：2002-12-19
申请号：US09884726
申请日：2001-06-18
IPC分类号： H01L029/04 , H01L031/036 , H01L031/0376 , H01L031/20 , H01L021/00 , H01L021/84
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1248 , H01L29/66765 , Y10S438/90
摘要： The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.
摘要翻译： 本发明公开了一种薄膜晶体管及其通过高各向异性蚀刻工艺形成的方法。 根据本发明的薄膜晶体管包括晶体管元件，其包括栅极电极，栅极绝缘层，半导体层以及源极和漏极电极; 钝化层沉积在层上并具有用于接触孔的第一开口; 以及与所述钝化层一起延伸并具有用于所述接触孔的第二开口的层间绝缘体，所述第一开口和所述第二开口在所述衬底上彼此对准，其中导电层沉积在所述接触孔的内壁上，并且 内壁由第一和第二开口形成，其平滑且连续地通过各向异性蚀刻工艺而逐渐变细。
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公开(公告)号：US20030197180A1
公开(公告)日：2003-10-23
申请号：US10438725
申请日：2003-05-15
IPC分类号： H01L029/76 , H01L031/036 , H01L031/112
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1248 , H01L29/66765 , Y10S438/90
摘要： The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.
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公开(公告)号：US20040095541A1
公开(公告)日：2004-05-20
申请号：US10610924
申请日：2003-07-02
IPC分类号： G02F001/1343
CPC分类号： G02F1/134336 , G02F1/1345 , G02F1/1362 , G09G3/3659
摘要： A liquid crystal device (and method for forming the LCD) includes a first transparent substrate having a first surface and a second surface, and a second transparent substrate having a first surface and a second surface. The first transparent substrate and the second transparent substrate are arranged such that the first surface of the first transparent substrate faces the first surface of the second transparent substrate, and a liquid crystal material is enclosed between the first surface of the first transparent substrate and the first surface of the second transparent substrate. A pixel array, in which a plurality of pixel regions are arranged in row and column directions and data signals are applied to the pixel regions through data lines, is formed on the first surface of the first transparent substrate and the first surface of the second transparent substrate.
摘要翻译： 液晶装置（及其形成方法）包括具有第一表面和第二表面的第一透明基板和具有第一表面和第二表面的第二透明基板。 第一透明基板和第二透明基板被布置成使得第一透明基板的第一表面面对第二透明基板的第一表面，并且液晶材料被包封在第一透明基板的第一表面和第一透明基板的第一表面之间 第二透明基板的表面。 在第一透明基板的第一表面和第二透明基板的第一表面上形成像素阵列，其中多个像素区域以行和列方向布置，数据信号通过数据线施加到像素区域 基质。
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