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公开(公告)号：US20180269348A1
公开(公告)日：2018-09-20
申请号：US15981191
申请日：2018-05-16
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Mark D. JAFFE , Kirk D. PETERSON
IPC: H01L31/18 , G02B6/12 , H01L31/0232 , H01L31/028 , H01L31/103 , H01P1/17 , H01P3/16 , H01L31/02
Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
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公开(公告)号：US20170125627A1
公开(公告)日：2017-05-04
申请号：US15408012
申请日：2017-01-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Mark D. JAFFE , Kirk D. PETERSON
IPC: H01L31/18 , G02B6/12 , H01L31/103 , H01L31/0232 , H01L31/028
CPC classification number: H01L31/1872 , G02B6/12 , G02B6/12004 , H01L31/02005 , H01L31/02327 , H01L31/028 , H01L31/103 , H01L31/1808 , H01L31/1864 , H01L2223/6627 , H01P1/172 , H01P3/16 , Y02E10/50
Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
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公开(公告)号：US20140145747A1
公开(公告)日：2014-05-29
申请号：US13689090
申请日：2012-11-29
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Nathaniel R. CHADWICK , John B. DEFORGE , John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Ezra D. HALL , Marc D. KNOX , Kirk D. PETERSON
CPC classification number: H01L29/00 , G01R31/2818 , G01R31/2856 , H01L22/34 , H01L2924/0002 , H01L2924/00
Abstract: A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.
Abstract translation: 提供一种包括半导体器件中的光激活测试连接的测试电路。 在半导体器件的测试期间，光激发测试连接是导电的，并且在测试之后是非导电的。
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公开(公告)号：US20170003452A1
公开(公告)日：2017-01-05
申请号：US14788179
申请日：2015-06-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Yoba AMOAH , Brennan J. BROWN , John J. ELLIS-MONAGHAN , Ashleigh R. KREIDER
IPC: G02B6/32
CPC classification number: G02B6/32 , G02B6/29304 , G02B6/30 , G02B6/305 , G02B6/34 , G02B6/352 , G02B6/4206
Abstract: A wafer structure includes a diffractive lens disposed on a backside of a wafer and coupled to a front side waveguide, the diffractive lens being configured to receive light and focus the light to the front side waveguide.
Abstract translation: 晶片结构包括设置在晶片的背面并耦合到前侧波导的衍射透镜，所述衍射透镜被配置为接收光并将光聚焦到前侧波导。
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公开(公告)号：US20150192735A1
公开(公告)日：2015-07-09
申请号：US14151138
申请日：2014-01-09
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Mark D. JAFFE , Kirk D. PETERSON , Jed H. RANKIN
CPC classification number: G02B6/122 , G02B1/045 , G02B6/125 , G02B6/132 , G02B6/136 , G02B2006/12097 , G02B2006/121 , G02B2006/12104 , G02B2006/12126
Abstract: Methods and structures for shielding optical waveguides are provided. A method includes forming a first optical waveguide core and forming a second optical waveguide core adjacent to the first optical waveguide core. The method also includes forming an insulator layer over the first optical waveguide core and the second optical waveguide core. The method further includes forming a shielding structure in the insulator layer between the first optical waveguide core and the second optical waveguide core.
Abstract translation: 提供了屏蔽光波导的方法和结构。 一种方法包括形成第一光波导芯并形成与第一光波导芯相邻的第二光波导芯。 该方法还包括在第一光波导芯和第二光波导芯上形成绝缘体层。 该方法还包括在第一光波导芯和第二光波导芯之间的绝缘体层中形成屏蔽结构。
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Patent Agency Ranking
6.发明申请PIXEL SENSOR CELL WITH HOLD NODE FOR LEAKAGE CANCELLATION AND METHODS OF MANUFACTURE AND DESIGN STRUCTURE 有权用于泄漏消除的带有保持节点的像素传感器单元及其制造和设计结构的方法公开(公告)号：US20140340548A1
公开(公告)日：2014-11-20
申请号：US14449557
申请日：2014-08-01
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： James W. ADKISSON , John J. ELLIS-MONAGHAN , Richard J. RASSEL
CPC classification number: H04N5/3595 , H01L27/14603 , H01L27/14609 , H04N5/3532 , H04N5/359 , H04N5/3745 , H04N5/378
Abstract: A reference pixel sensor cell (e.g., global shutter) with hold node for leakage cancellation, methods of manufacture and design structure is provided. A pixel array includes one or more reference pixel sensor cells dispersed locally throughout active light sensing regions. The one or more reference pixel sensor cells provides a reference signal used to correct for photon generated leakage signals which vary by locality within the active light sensing regions.
Abstract translation: 提供了具有用于泄漏消除的保持节点的参考像素传感器单元（例如，全局快门），制造方法和设计结构。 像素阵列包括在有源光感测区域局部分散的一个或多个参考像素传感器单元。 一个或多个参考像素传感器单元提供用于校正由于有源光感测区域内的局部性而变化的光子产生的泄漏信号的参考信号。
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公开(公告)号：US20200150348A1
公开(公告)日：2020-05-14
申请号：US16739418
申请日：2020-01-10
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Yoba AMOAH , Brennan J. BROWN , John J. ELLIS-MONAGHAN , Ashleigh R. KREIDER
Abstract: A wafer structure includes a diffractive lens disposed on a backside of a wafer and coupled to a front side waveguide, the diffractive lens being configured to receive light and focus the light to the front side waveguide.
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公开(公告)号：US20180254374A1
公开(公告)日：2018-09-06
申请号：US15971240
申请日：2018-05-04
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Mark D. JAFFE , Kirk D. PETERSON
IPC: H01L31/18 , G02B6/12 , H01L31/028 , H01L31/0232 , H01L31/103
Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
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公开(公告)号：US20180076351A1
公开(公告)日：2018-03-15
申请号：US15807054
申请日：2017-11-08
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Mark D. JAFFE , Kirk D. PETERSON
IPC: H01L31/18 , G02B6/12 , H01L31/028 , H01L31/0232 , H01L31/103
Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
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公开(公告)号：US20170125626A1
公开(公告)日：2017-05-04
申请号：US15408004
申请日：2017-01-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： John J. ELLIS-MONAGHAN , Jeffrey P. GAMBINO , Mark D. JAFFE , Kirk D. PETERSON
IPC: H01L31/18 , G02B6/12 , H01L31/103 , H01L31/0232 , H01L31/028
CPC classification number: H01L31/1808 , G02B6/12 , G02B6/12004 , H01L31/02005 , H01L31/02327 , H01L31/028 , H01L31/103 , H01L31/1864 , H01L31/1872 , H01L2223/6627 , H01P1/172 , H01P3/16 , H05K999/99 , Y02E10/50
Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
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