公开(公告)号：US20230189656A1

公开(公告)日：2023-06-15

申请号：US17643594

申请日：2021-12-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： SABA ZARE ,  MICHAEL RIZZOLO ,  THEODORUS E. STANDAERT ,  ALEXANDER REZNICEK

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L25/065

CPC classification number: H01L43/08 ,  H01L27/226 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L25/0657

Abstract: A semiconductor device is provided. The semiconductor device includes a first electrode; an MRAM stack formed on the first electrode; a hardmask structure formed on the MRAM stack; a conductive etch stop layer formed around the hardmask structure; and a second electrode formed on the hardmask structure.