公开(公告)号：US20160118348A1

公开(公告)日：2016-04-28

申请号：US14522083

申请日：2014-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Mukta G. FAROOQ ,  John A. FITZSIMMONS ,  Erdem KALTALIOGLU ,  Wei LIN ,  Spyridon SKORDAS ,  Kevin R. WINSTEL

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L21/66 ,  H01L23/522 ,  H01L21/302 ,  H01L21/288 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/562 ,  H01L21/2885 ,  H01L21/302 ,  H01L21/76898 ,  H01L22/34 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Strain detection structures used with bonded wafers and chips and methods of manufacture are disclosed. The method includes forming lower metal wiring structures associated with a lower wafer structure. The method further includes bonding the lower wafer structure to an upper wafer structure and thinning the upper wafer, and forming upper metal wiring structures. The method further includes electrically linking the lower metal wiring structures to the upper metal wiring structures by formation of through silicon via structures to form an electrically connected chain extending between multiple wafer structures. The method further includes forming contacts to an outside environment which electrically contact two of the lower metal wiring structures.

Abstract translation: 公开了与键合晶片和芯片一起使用的应变检测结构和制造方法。 该方法包括形成与下晶片结构相关联的下金属布线结构。 该方法还包括将下晶片结构接合到上晶片结构并使上晶片变薄，并形成上金属布线结构。 该方法还包括通过形成穿过硅的结构将下部金属布线结构电连接到上部金属布线结构，以形成在多个晶片结构之间延伸的电连接链。 该方法还包括形成与外部环境的接触，该外部环境电接触两个下部金属布线结构。