公开(公告)号：US20140312412A1

公开(公告)日：2014-10-23

申请号：US13864760

申请日：2013-04-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： DECHAO GUO ,  SHU-JEN HAN ,  YU LU ,  KEITH KWONG HON WONG

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/66045 ,  H01L21/02527 ,  H01L21/043 ,  H01L21/044 ,  H01L21/30604 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684 ,  H01L51/0048 ,  H01L51/0545

Abstract: Transistors with self-aligned source/drain regions and methods for making the same. The methods include forming a gate structure embedded in a recess in a substrate; removing substrate material around the gate structure to create self-aligned source and drain recesses; forming a channel layer over the gate structure and the source and drain recesses; and forming source and drain contacts in the source and drain recesses, wherein the source and drain contacts extend above the channel layer.

Abstract translation: 具有自对准源极/漏极区域的晶体管及其制造方法。 所述方法包括形成嵌入衬底中的凹部中的栅极结构; 去除栅极结构周围的衬底材料以产生自对准的源极和漏极凹槽; 在栅极结构和源极和漏极凹槽上形成沟道层; 以及在源极和漏极凹部中形成源极和漏极接触，其中源极和漏极接触在沟道层上方延伸。

公开(公告)号：US20150228753A1

公开(公告)日：2015-08-13

申请号：US14698206

申请日：2015-04-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： DECHAO GUO ,  SHU-JEN HAN ,  YU LU ,  KEITH KWONG HON WONG

IPC: H01L29/66 ,  H01L29/423 ,  H01L21/306 ,  H01L21/04 ,  H01L29/16 ,  H01L21/02

CPC classification number: H01L29/66045 ,  H01L21/02527 ,  H01L21/043 ,  H01L21/044 ,  H01L21/30604 ,  H01L29/1606 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78684 ,  H01L51/0048 ,  H01L51/0545

Abstract: Transistors with self-aligned source/drain regions and methods for making the same. The methods include forming a gate structure embedded in a recess in a substrate; removing substrate material around the gate structure to create self-aligned source and drain recesses; forming a channel layer over the gate structure and the source and drain recesses; and forming source and drain contacts in the source and drain recesses. The source and drain contacts extend above the channel layer.

Abstract translation: 具有自对准源极/漏极区域的晶体管及其制造方法。 所述方法包括形成嵌入衬底中的凹部中的栅极结构; 去除栅极结构周围的衬底材料以产生自对准的源极和漏极凹槽; 在栅极结构和源极和漏极凹槽上形成沟道层; 以及在源极和漏极凹槽中形成源极和漏极接触。 源极和漏极触点在沟道层上方延伸。