QUBIT READOUT
    2.
    发明申请

    公开(公告)号:US20220181537A1

    公开(公告)日:2022-06-09

    申请号:US17406243

    申请日:2021-08-19

    申请人: IQM Finland Oy

    IPC分类号: H01L39/22 H01L27/18 G06N10/00

    摘要: It is an objective to provide an arrangement and a quantum computing system for qubit readout. According to an embodiment, an arrangement for qubit readout includes at least one qubit and a controllable energy relaxation structure comprising at least one junction. The controllable energy relaxation structure is coupled to the at least one qubit, and is configured to absorb, in response to a control signal, at least one photon from the at least one qubit via photon-assisted tunnelling of a charge through the at least one junction. The arrangement also includes a charge storage configured to store the tunnelled charge and a charge sensing structure coupled to the charge storage. The charge sensing structure is configured to provide a readout signal in response to detecting the tunnelled charge in the charge storage.

    METHOD AND ARRANGEMENT FOR RESETTING QUBITS

    公开(公告)号:US20210406750A1

    公开(公告)日:2021-12-30

    申请号:US17087901

    申请日:2020-11-03

    申请人: IQM Finland Oy

    IPC分类号: G06N10/00 H01L33/04 H05K7/20

    摘要: A method, system, and arrangement for resetting qubits are disclosed. An example system includes one or more quantum circuit refrigerators for resetting qubits. Each of the quantum circuit refrigerators includes a tunneling junction and a control input for receiving a control signal. Photon-assisted single-electron tunneling takes place across the respective tunneling junction in response to a control signal. Capacitive or inductive coupling elements between the qubits and the quantum circuit refrigerators couple each qubit to the quantum circuit refrigerator(s). The qubits, quantum circuit refrigerators, and coupling elements are located in a cryogenically cooled environment. A common control signal line to the control inputs crosses into the cryogenically cooled environment from a room temperature environment.

    A Circuit Assembly, A System and a Method for Cooling Quantum Electric Devices

    公开(公告)号:US20200272925A1

    公开(公告)日:2020-08-27

    申请号:US16066207

    申请日:2016-12-27

    申请人: IQM Finland Oy

    摘要: A circuit assembly for cooling a quantum electrical device, use of said circuit assembly, a system and a method for cooling a quantum electric device are provided. The circuit assembly comprises a quantum electric device to be cooled, at least one normal-metal-insulator-superconductor (NIS) tunnel junction electrically connected to the quantum electric device and at least one superconductive lead for supplying a drive voltage VQCR for said at least one NIS tunnel junction. The quantum electric device is cooled when the voltage VQCR is supplied to at least one NIS tunnel junction, said voltage VQCR being equal to or below the voltage NΔ/e, where N=1 or N=2, N is the number of NIS tunnel junctions electrically coupled in series with the means for generating the voltage, Δ is the energy gap in the superconductor density of states, and e is the elementary charge.

    Circuit assembly, a system and a method for cooling quantum electric devices

    公开(公告)号:US11985908B2

    公开(公告)日:2024-05-14

    申请号:US17524492

    申请日:2021-11-11

    申请人: IQM Finland Oy

    摘要: A circuit assembly for cooling a quantum electrical device, use of said circuit assembly, a system and a method for cooling a quantum electric device are provided. The circuit assembly comprises a quantum electric device to be cooled, at least one normal-metal-insulator-superconductor (NIS) tunnel junction electrically connected to the quantum electric device and at least one superconductive lead for supplying a drive voltage VQCR for said at least one NIS tunnel junction. The quantum electric device is cooled when the voltage VQCR is supplied to at least one NIS tunnel junction, said voltage VQCR being equal to or below the voltage NΔ/e, where N=1 or N=2, N is the number of NIS tunnel junctions electrically coupled in series with the means for generating the voltage, Δ is the energy gap in the superconductor density of states, and e is the elementary charge.