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公开(公告)号：US07227255B2
公开(公告)日：2007-06-05
申请号：US11098501
申请日：2005-04-05
IPC分类号： H01L23/48
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
摘要翻译： 一种半导体器件，其能够以近似的间隔布置字线，包括排列成阵列的多个存储晶体管，以及同时作为沿行方向延伸的同一行中的存储晶体管的栅电极的多条字线，并重复 在列方向上，在多个字线之间形成绝缘膜以使字线彼此绝缘和隔离，并且字线分隔的尺寸由绝缘膜的厚度限定。
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2.发明授权Method of fabricating a memory transistor array utilizing insulated word lines as gate electrodes 失效使用绝缘字线作为栅电极制造存储晶体管阵列的方法公开(公告)号：US07049180B2
公开(公告)日：2006-05-23
申请号：US11098447
申请日：2005-04-05
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
摘要翻译： 一种半导体器件，其能够以近似的间隔布置字线，包括排列成阵列的多个存储晶体管，以及同时作为沿行方向延伸的同一行中的存储晶体管的栅电极的多条字线，并重复 在列方向上，在多个字线之间形成绝缘膜以使字线彼此绝缘和隔离，并且字线分隔的尺寸由绝缘膜的厚度限定。
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公开(公告)号：US20050255652A1
公开(公告)日：2005-11-17
申请号：US11098447
申请日：2005-04-05
IPC分类号： H01L21/28 , H01L21/8246 , H01L27/115 , H01L21/336
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
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公开(公告)号：US06891262B2
公开(公告)日：2005-05-10
申请号：US10196636
申请日：2002-07-17
IPC分类号： H01L21/28 , H01L21/8246 , H01L27/115 , H01L23/48 , H01L23/04 , H01L23/495 , H01L29/788
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
摘要翻译： 一种半导体器件，其能够以近似的间隔布置字线，包括排列成阵列的多个存储晶体管，以及同时作为沿行方向延伸的同一行中的存储晶体管的栅电极的多条字线，并重复 在列方向上，在多个字线之间形成绝缘膜，以使字线彼此绝缘和隔离，并且字线分隔的尺寸由绝缘膜的厚度限定。
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公开(公告)号：US07012329B2
公开(公告)日：2006-03-14
申请号：US11098503
申请日：2005-04-05
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
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6.发明授权Nonvolatile semiconductor memory device and methods for operating and producing the same 失效非易失性半导体存储器件及其操作和制造方法公开(公告)号：US06721205B2
公开(公告)日：2004-04-13
申请号：US09735938
申请日：2000-12-14
IPC分类号： G11C1604
CPC分类号： H01L27/11521 , G11C16/0475 , G11C16/0491 , G11C16/10 , H01L27/115 , H01L29/66825 , H01L29/7923
摘要： A nonvolatile semiconductor memory device with high reliability (free from troubles in storing data), a high charge injection efficiency, and enabling parallel operation in a VG cell array, includes channel forming regions, a charge storing film which consists of stacked dielectric films and is capable of storing a charge, two storage portions forming parts of the charge storing film and overlapping the channel forming regions, a single layer dielectric film between the storage portions and in contact with the channel forming region, a control gate electrode on the single layer dielectric film, and a memory gate electrode on the storage portions.
摘要翻译： 具有高可靠性（不存储数据的麻烦），高电荷注入效率和在VG电池阵列中实现并行操作的非易失性半导体存储器件包括沟道形成区域，电荷存储膜，其由堆叠的电介质膜组成，并且是 能够存储电荷的两个存储部分，形成电荷存储膜的部分并且与沟道形成区重叠的两个存储部分，在存储部分之间并与沟道形成区域接触的单层电介质膜，单层电介质上的控制栅电极 膜和存储部分上的存储栅电极。
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公开(公告)号：US20050218522A1
公开(公告)日：2005-10-06
申请号：US11098501
申请日：2005-04-05
IPC分类号： H01L21/28 , H01L21/8246 , H01L27/115 , H01L21/8242
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
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公开(公告)号：US20050146015A1
公开(公告)日：2005-07-07
申请号：US11072505
申请日：2005-03-07
IPC分类号： H01L21/28 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
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公开(公告)号：US20050189570A1
公开(公告)日：2005-09-01
申请号：US11098503
申请日：2005-04-05
IPC分类号： H01L21/28 , H01L21/8246 , H01L27/115 , H01L21/8242 , H01L23/02 , H01L27/10 , H01L29/73 , H01L29/74
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
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10.发明授权公开(公告)号：US07023061B2
公开(公告)日：2006-04-04
申请号：US11072505
申请日：2005-03-07
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.
摘要翻译： 一种半导体器件，其能够以近似的间隔布置字线，包括排列成阵列的多个存储晶体管，以及同时作为沿行方向延伸的同一行中的存储晶体管的栅电极的多条字线，并重复 在列方向上，在多个字线之间形成绝缘膜以使字线彼此绝缘和隔离，并且字线分隔的尺寸由绝缘膜的厚度限定。
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