公开(公告)号：US06721205B2

公开(公告)日：2004-04-13

申请号：US09735938

申请日：2000-12-14

申请人： Toshio Kobayashi ,  Hiroyuki Moriya ,  Ichiro Fujiwara

发明人： Toshio Kobayashi ,  Hiroyuki Moriya ,  Ichiro Fujiwara

IPC分类号： G11C1604

CPC分类号： H01L27/11521 ,  G11C16/0475 ,  G11C16/0491 ,  G11C16/10 ,  H01L27/115 ,  H01L29/66825 ,  H01L29/7923

摘要： A nonvolatile semiconductor memory device with high reliability (free from troubles in storing data), a high charge injection efficiency, and enabling parallel operation in a VG cell array, includes channel forming regions, a charge storing film which consists of stacked dielectric films and is capable of storing a charge, two storage portions forming parts of the charge storing film and overlapping the channel forming regions, a single layer dielectric film between the storage portions and in contact with the channel forming region, a control gate electrode on the single layer dielectric film, and a memory gate electrode on the storage portions.

摘要翻译： 具有高可靠性（不存储数据的麻烦），高电荷注入效率和在VG电池阵列中实现并行操作的非易失性半导体存储器件包括沟道形成区域，电荷存储膜，其由堆叠的电介质膜组成，并且是 能够存储电荷的两个存储部分，形成电荷存储膜的部分并且与沟道形成区重叠的两个存储部分，在存储部分之间并与沟道形成区域接触的单层电介质膜，单层电介质上的控制栅电极 膜和存储部分上的存储栅电极。

公开(公告)号：US20050020013A1

公开(公告)日：2005-01-27

申请号：US10922141

申请日：2004-08-19

申请人： Hiroyuki Moriya ,  Toshio Kobayashi

发明人： Hiroyuki Moriya ,  Toshio Kobayashi

IPC分类号： H01L21/8247 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34

CPC分类号： H01L29/513 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/518 ,  H01L29/7923 ,  Y10S257/908

摘要： The present invention prevents production of residue which causes short-circuit between word lines. A memory cell comprises a channel formation region CH, charge storage films CSF each comprised of a plurality of stacked dielectric films, two storages comprised of regions of the charge storage films CSF overlapping the two ends of the channel formation region CH, a single-layer dielectric film DF2 contacting the channel formation region CH between the storages, auxiliary layers (for example, bit lines BL1 and BL2) formed on two impurity regions S/D, two first control electrodes CG1 and CG2 formed on the auxiliary layers with dielectric film interposed and positioned on the storages, and a second control electrode WL buried in a state insulated from the first control electrodes CG1 and CG2 in a space between them and contacting the single-layer dielectric film DF2. Since the main regions on facing surfaces of the first control electrodes CG1 and CG2 become forward tapered, conductive residue is not left at the time of processing the second control electrode WL.

摘要翻译： 本发明防止产生在字线之间短路的残留物。 存储单元包括沟道形成区域CH，每个由多个堆叠的电介质膜组成的电荷存储膜CSF，由与沟道形成区域CH的两端重叠的电荷存储膜CSF的区域组成的两个存储器，单层 电介质膜DF2与存储器之间的沟道形成区域CH，形成在两个杂质区域S / D上的辅助层（例如位线BL1和BL2）接触，形成在辅助层上的两个第一控制电极CG1和CG2， 并且位于存储器上，以及第二控制电极WL，其在与它们之间的空间中与第一控制电极CG1和CG2绝缘的状态下被掩埋并与单层电介质膜DF2接触。 由于第一控制电极CG1和CG2的相对表面上的主要区域向前渐变，所以在处理第二控制电极WL时不会导致残留物。

公开(公告)号：US06803620B2

公开(公告)日：2004-10-12

申请号：US10168921

申请日：2002-10-02

申请人： Hiroyuki Moriya ,  Toshio Kobayashi

发明人： Hiroyuki Moriya ,  Toshio Kobayashi

IPC分类号： H01L27108

CPC分类号： H01L29/513 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/518 ,  H01L29/7923 ,  Y10S257/908

摘要： The present invention prevents production of residue which causes short-circuit between word lines. A memory cell comprises a channel formation region CH, charge storage films CSF each comprised of a plurality of stacked dielectric films, two storages comprised of regions of the charge storage films CSF-overlapping the two ends of the channel formation region CH, a single-layer dielectric film DF2 contacting the channel formation region CH between the storages, auxiliary layers (for example, bit lines BL1 and BL2) formed on two impurity regions S/D, two first control-electrodes CG1 and CG2 formed on the auxiliary layers with dielectric film interposed and positioned on the storages, and a second control electrode WL buried in a state insulated from the first control electrodes CG1 and CG2 in a space between them and contacting the single-layer dielectric film DF2. Since the main regions on facing surfaces of the first control electrodes CG1 and CG2 become forward tapered, conductive residue is not left at the time of processing the second control electrode WL.

摘要翻译： 本发明防止产生在字线之间短路的残留物。 存储单元包括沟道形成区域CH，每个由多个堆叠的电介质膜构成的电荷存储膜CSF，由电荷存储膜的区域组成的两个存储区域CSF，与沟道形成区域CH的两端重叠， 接触存储器之间的沟道形成区域CH的层间电介质膜DF2，形成在两个杂质区域S / D上的辅助层（例如，位线BL1和BL2），形成在具有电介质的辅助层上的两个第一控制电极CG1和CG2 插入并定位在存储器上的膜;以及第二控制电极WL，其在与它们之间的空间中与第一控制电极CG1和CG2绝缘的状态下被掩埋并与单层电介质膜DF2接触。 由于第一控制电极CG1和CG2的相对表面上的主要区域向前渐变，所以在处理第二控制电极WL时不会导致残留物。

公开(公告)号：US06858497B2

公开(公告)日：2005-02-22

申请号：US10922141

申请日：2004-08-19

申请人： Hiroyuki Moriya ,  Toshio Kobayashi

发明人： Hiroyuki Moriya ,  Toshio Kobayashi

IPC分类号： H01L21/8247 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L29/513 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/518 ,  H01L29/7923 ,  Y10S257/908

摘要： The present invention prevents production of residue which causes short-circuit between word lines. A memory cell comprises a channel formation region CH, charge storage films CSF each comprised of a plurality of stacked dielectric films, two storages comprised of regions of the charge storage films CSF overlapping the two ends of the channel formation region CH, a single-layer dielectric film DF2 contacting the channel formation region CH between the storages, auxiliary layers (for example, bit lines BL1 and BL2) formed on two impurity regions S/D, two first control electrodes CG1 and CG2 formed on the auxiliary layers with dielectric film interposed and positioned on the storages, and a second control electrode WL buried in a state insulated from the first control electrodes CG1 and CG2 in a space between them and contacting the single-layer dielectric film DF2. Since the main regions on facing surfaces of the first control electrodes CG1 and CG2 become forward tapered, conductive residue is not left at the time of processing the second control electrode WL.

摘要翻译： 本发明防止产生在字线之间短路的残留物。 存储单元包括沟道形成区域CH，每个由多个堆叠的电介质膜组成的电荷存储膜CSF，由与沟道形成区域CH的两端重叠的电荷存储膜CSF的区域组成的两个存储器，单层 电介质膜DF2与存储器之间的沟道形成区域CH，形成在两个杂质区域S / D上的辅助层（例如位线BL1和BL2）接触，形成在辅助层上的两个第一控制电极CG1和CG2， 并且位于存储器上，以及第二控制电极WL，其在与它们之间的空间中与第一控制电极CG1和CG2绝缘的状态下被掩埋并与单层电介质膜DF2接触。 由于第一控制电极CG1和CG2的相对表面上的主要区域向前渐变，所以在处理第二控制电极WL时不会导致残留物。

公开(公告)号：US09109090B2

公开(公告)日：2015-08-18

申请号：US13267278

申请日：2011-10-06

申请人： Hiroyuki Moriya

发明人： Hiroyuki Moriya

IPC分类号： A61K31/74 ,  C08G77/26 ,  C08G77/04 ,  A61K8/898 ,  A61Q5/02 ,  A61Q5/12 ,  C08G77/388 ,  C08L83/08 ,  A61Q1/02 ,  A61Q1/10 ,  A61Q17/04 ,  A61Q19/00

CPC分类号： C08G77/26 ,  A61K8/898 ,  A61Q1/02 ,  A61Q1/10 ,  A61Q5/02 ,  A61Q5/12 ,  A61Q17/04 ,  A61Q19/00 ,  C08G77/04 ,  C08G77/388 ,  C08L83/08

摘要： An amino acid-modified organopolysiloxane can be prepared under mild reaction conditions by reacting an amino-modified organopolysiloxane with an amino acid or amino acid derivative ester in the presence of an organometallic catalyst. The amino acid-modified organopolysiloxane having a hydrophilic group is useful in cosmetics, powder surface treatment, fiber or fabric treatment, coating, and resin modification.

摘要翻译： 氨基酸改性的有机聚硅氧烷可以在温和的反应条件下通过在有机金属催化剂存在下使氨基改性的有机聚硅氧烷与氨基酸或氨基酸衍生物酯反应来制备。 具有亲水基团的氨基酸改性的有机聚硅氧烷可用于化妆品，粉末表面处理，纤维或织物处理，涂布和树脂改性。

公开(公告)号：US08905339B2

公开(公告)日：2014-12-09

申请号：US13544457

申请日：2012-07-09

申请人： Kazuaki Tabata ,  Hiroyuki Moriya

发明人： Kazuaki Tabata ,  Hiroyuki Moriya

IPC分类号： B02C4/32

CPC分类号： G03G15/104

摘要： Provided is a liquid developer-preparing apparatus preparing a liquid developer obtained by dispersing toner particles in a liquid, the apparatus including, a tank that stores a dispersion including a liquid and toner particles, a pulverizing device that pulverizes the toner particles in the dispersion sent from the tank; a liquid-sending route in which the dispersion circulates between the tank and the pulverizing device, a liquid-sending device that is provided to the liquid-sending route and sends the dispersion, a pressure gauge that is provided to the liquid-sending route and measures a liquid-sending pressure of the dispersion, and a determination device that determines whether or not the toner particles in the dispersion have been pulverized to a target volume average particle size.

摘要翻译： 本发明提供了制备通过将调色剂颗粒分散在液体中而获得的液体显影剂的液体显影剂制备装置，该装置包括储存包含液体和调色剂颗粒的分散体的罐，粉碎分散体中的调色剂颗粒的粉碎装置 从坦克 分散体在罐与粉碎装置之间循环的送液路径，设置在送液路径上并送出分散液的送液装置，设置在送液路径上的压力计， 测量分散体的送液压力，以及确定分散体中的调色剂颗粒是否被粉碎到目标体积平均粒度的确定装置。

公开(公告)号：US08426099B2

公开(公告)日：2013-04-23

申请号：US13478730

申请日：2012-05-23

申请人： Tomohito Nakajima ,  Hiroyuki Moriya ,  Hideya Katsuhara ,  Seiichi Takagi ,  Kazuya Hongo

发明人： Tomohito Nakajima ,  Hiroyuki Moriya ,  Hideya Katsuhara ,  Seiichi Takagi ,  Kazuya Hongo

IPC分类号： G03G9/08

CPC分类号： C08J3/16 ,  C08J3/21 ,  G03G9/0804 ,  G03G9/0819 ,  G03G9/0825 ,  G03G9/0827

摘要： Colored resin particles, each includes: a resin; and a colorant, wherein a value of average equivalent circle diameter A (μm) of the colored resin particles is 3≦A≦6, an average degree of circularity B of the colored resin particles satisfies the following expression (1), and 0.990−0.0083A≦B≦1.021−0.0117A  (1) a cumulative number frequency of particles which have degrees of circularity of less than 0.9 in the colored resin particles is 1% or less.

摘要翻译： 有色树脂颗粒各自包括：树脂; 和着色树脂颗粒的平均当量圆直径A（母体）的值为3≤A@ 6的着色剂，着色树脂颗粒的平均圆形度B满足下式（1），并且0.990- 0.0083A @ B @ 1.021-0.0117A（1）着色树脂颗粒中圆度小于0.9的颗粒的累积数频率为1％以下。

公开(公告)号：US20110063384A1

公开(公告)日：2011-03-17

申请号：US12878259

申请日：2010-09-09

申请人： Takuya Uchida ,  Hiroyuki Moriya ,  Hideki Watanabe

发明人： Takuya Uchida ,  Hiroyuki Moriya ,  Hideki Watanabe

IPC分类号： B41J2/175 ,  B65D37/00

CPC分类号： B41J2/17513 ,  B41J2/17556

摘要： A disclosed liquid container containing liquid to be supplied to a liquid discharge head includes a container main body defining a liquid containing section and including an opening section formed in one surface of the container main body, the opening section including an opening; and a film-like flexible member sealing the opening section of the container main body. Further, the film-like flexible member is joined with a joint section formed on the opening section of the container main body in a state where the film-like flexible member is bent, and a concave-convex structure is formed in the circumferential direction of the joint section.

摘要翻译： 公开的容纳供给液体排放头的液体的液体容器包括：容器主体，限定有液体容纳部，容纳在容器主体的一个表面上的开口部，该开口部包括开口部; 以及密封容器主体的开口部分的膜状柔性构件。 此外，膜状柔性构件在成膜状挠性构件弯曲的状态下与形成在容器主体的开口部上的接合部接合，并且在圆周方向上形成凹凸结构 联合部分。

公开(公告)号：US5277369A

公开(公告)日：1994-01-11

申请号：US826661

申请日：1992-01-29

申请人： Hiroyuki Moriya ,  Kiyoshi Hashimoto ,  Kazunari Muraoka

发明人： Hiroyuki Moriya ,  Kiyoshi Hashimoto ,  Kazunari Muraoka

IPC分类号： B02C19/06

CPC分类号： B02C19/061 ,  B02C19/066

摘要： A micromilling device includes a milling chamber, at least one nozzle for injecting a stream of solid particles to be milled into the chamber in a predetermined path, and impact elements positioned in the path for impacting the stream of solid particles.

摘要翻译： 微型加料装置包括研磨室，用于将预定路径中待研磨的固体颗粒物流注入到腔室中的至少一个喷嘴以及定位在路径中以冲击固体颗粒物流的冲击元件。

公开(公告)号：US08398220B2

公开(公告)日：2013-03-19

申请号：US12878259

申请日：2010-09-09

申请人： Takuya Uchida ,  Hiroyuki Moriya ,  Hideki Watanabe

发明人： Takuya Uchida ,  Hiroyuki Moriya ,  Hideki Watanabe

IPC分类号： B41J2/175

CPC分类号： B41J2/17513 ,  B41J2/17556

摘要： A disclosed liquid container containing liquid to be supplied to a liquid discharge head includes a container main body defining a liquid containing section and including an opening section formed in one surface of the container main body, the opening section including an opening; and a film-like flexible member sealing the opening section of the container main body. Further, the film-like flexible member is joined with a joint section formed on the opening section of the container main body in a state where the film-like flexible member is bent, and a concave-convex structure is formed in the circumferential direction of the joint section.

摘要翻译： 公开的容纳供给液体排放头的液体的液体容器包括：容器主体，限定有液体容纳部，容纳在容器主体的一个表面上的开口部，该开口部包括开口部; 以及密封容器主体的开口部分的膜状柔性构件。 此外，膜状柔性构件在成膜状挠性构件弯曲的状态下与形成在容器主体的开口部上的接合部接合，并且在圆周方向上形成凹凸结构 联合部分。