摘要:
The present invention provides a positron source essentially consisting of a carbon member having 18F bound onto the surface thereof, a method of preparing the same, and an automated system for supplying the same. In the present invention, the positron source is prepared by irradiating a solution containing both H218O and a small amount of natural fluorine ions with a beam of charged particles to generate 18F, and then passing an electric current through the solution using a carbon member 40 as an anode to cause to bind the generated 18F onto the surface of the carbon member.
摘要:
The present invention provides a positron source essentially consisting of a carbon member having 18F bound onto the surface thereof, a method of a preparing the same, and an automated system for supplying the same. In the present invention, the positron source is prepared by irradiating a solution 35 containing both H218O and a small amount of natural fluorine ions with a beam of charged particles to generate 18F, and then passing an electric current through the solution 35 using a carbon member 40 as an anode to cause to bind the generated 18F onto the surface of the carbon member 40.
摘要:
A method of separating and recovering 18F from 18O water at high purity and efficiency while maintaining the purity of the 18O water. By using a solid electrode (1) as an anode and a container (electrodeposition vessel) (2) made of platinum as a cathode, 18F in a solution (4) is electrodeposited on the solid electrode surface by applying a voltage. Then, by using the solid electrode (1) on which 18F is electrodeposited as a cathode and a container (recovery vessel) (5) holding pure water therein as an anode, 18F is recovered in the pure water by applying a voltage of opposite polarity to that of the electrodeposition. In this process, little 18O water is lost. The initial concentration of the 18O water is maintained even after the electrodeposition of 18F, so that the 18O water can be repeatedly used as an irradiation target for production of 18F.
摘要:
Petunia explants are irradiated with heavy-ion beams, and the chimeric individuals differentiated from the explants are selected (FSRP method). Then, explants are obtained from the chimeric individuals and subjected to tissue culture, followed by selection of re-differentiated chimeric individuals with stable characters (SSRP method). By these procedures, it becomes possible to create chimeric plants such as variegated petunia efficiently.
摘要:
Petunia explants are irradiated with heavy-ion beams, and the chimeric individuals differentiated from the explants are selected (FSRP method). Then, explants are obtained from the chimeric individuals and subjected to tissue culture, followed by selection of re-differentiated chimeric individuals with stable characters (SSRP method). By these procedures, it becomes possible to create chimeric plants such as variegated petunia efficiently.
摘要:
Disclosed is a gamma-ray image pickup apparatus having high energy resolution and high position resolution. A Compton camera is constructed by arranging two electrode split planar germanium semiconductor detectors in front and behind. This Compton camera processes a detection signal obtained from an anode and a cathode of the planar electrode split germanium detector, and can measure at how deep position from the detector surface the interaction of a gamma ray occurs. Moreover, with regard to the direction parallel to the electrode surface of the detector, the interaction position of the gamma ray was able to be measured with high accuracy, Accordingly, spatial resolution is improved by resolving a formula for the kinematics of Compton scattering with excellent accuracy.
摘要:
A semiconductor dark image position sensing device comprises a photoelectric layer generating a photoelectric current in a portion where light is input in response to intensity of the light input, a resistive element layer into which the photoelectric current generated in the photoelectric layer flows from a portion corresponding to the position of light input, a second resistive element disposed in association with the photoelectric layer for replenishing an insufficient amount of electric current with respect to the photoelectric current so as to flow the same into the resistive element layer in such that a distribution of electric current flowing into the resistive element layer corresponding to the position of light input becomes substantially uniform over a whole sensing region, and signal electric current output terminals disposed at the opposite ends of the second resistive element.
摘要:
In order to reduce errors in sensing an image position derived from noise light such as background noise, a semiconductor image position sensing device is provided with a photoelectric layer generating a photoelectric current in a portion onto which light was input in response to intensity of the light input to the photoelectric layer, a resistance layer laminated on the photoelectric layer in which the photoelectric current generated in the photoelectric layer flows into a portion corresponding to that onto which the light was input, and signal current output terminals wherein the photoelectric current generated in the photoelectric layer is distributed in a ratio in response to a resistance value between the signal current output terminals and the resistance layer defined at a position where the photoelectric current flowed into the resistance layer and from which the photoelectric current is output as an electric current obtained by summing currents over the whole sensing sections altogether, comprising further a resistance subtracting a photoelectric current having a predetermined distribution of electric current density from photoelectric currents generated in respective portions of the photoelectric layer over the whole sensing sections, and the photoelectric current subtracted by means of the resistance being adapted to flow into the resistance layer.