Method of separating and collecting 18F in 18O water
    3.
    发明授权
    Method of separating and collecting 18F in 18O water 失效
    在18O水中分离收集18F的方法

    公开(公告)号:US06827838B2

    公开(公告)日:2004-12-07

    申请号:US10203488

    申请日:2002-08-09

    IPC分类号: C25C124

    摘要: A method of separating and recovering 18F from 18O water at high purity and efficiency while maintaining the purity of the 18O water. By using a solid electrode (1) as an anode and a container (electrodeposition vessel) (2) made of platinum as a cathode, 18F in a solution (4) is electrodeposited on the solid electrode surface by applying a voltage. Then, by using the solid electrode (1) on which 18F is electrodeposited as a cathode and a container (recovery vessel) (5) holding pure water therein as an anode, 18F is recovered in the pure water by applying a voltage of opposite polarity to that of the electrodeposition. In this process, little 18O water is lost. The initial concentration of the 18O water is maintained even after the electrodeposition of 18F, so that the 18O water can be repeatedly used as an irradiation target for production of 18F.

    摘要翻译: 从18%O水中以高纯度和高效率分离和回收18 F的方法,同时保持18 W水的纯度。 通过使用固体电极(1)和由铂作为阴极的容器(电沉积容器)(2),将溶液(4)中的18 F通过施加电压电沉积在固体电极表面上。 然后,通过使用其中电沉积有18 F的固体电极(1)和作为阳极保持纯水的容器(回收容器)(5)),在纯水中回收18 F 施加与电沉积相反的极性电压。 在这个过程中,少量的18%的水会丢失。 即使在电沉积18 F之后,也保持了18 C的水的初始浓度,因此可以重复使用<18> O水作为生产18 F的照射目标。

    Gamma-ray detector and gamma-ray image pickup apparatus
    6.
    发明申请
    Gamma-ray detector and gamma-ray image pickup apparatus 审中-公开
    γ射线检测器和γ射线摄像装置

    公开(公告)号:US20050139775A1

    公开(公告)日:2005-06-30

    申请号:US11020031

    申请日:2004-12-23

    IPC分类号: G01T1/24

    摘要: Disclosed is a gamma-ray image pickup apparatus having high energy resolution and high position resolution. A Compton camera is constructed by arranging two electrode split planar germanium semiconductor detectors in front and behind. This Compton camera processes a detection signal obtained from an anode and a cathode of the planar electrode split germanium detector, and can measure at how deep position from the detector surface the interaction of a gamma ray occurs. Moreover, with regard to the direction parallel to the electrode surface of the detector, the interaction position of the gamma ray was able to be measured with high accuracy, Accordingly, spatial resolution is improved by resolving a formula for the kinematics of Compton scattering with excellent accuracy.

    摘要翻译: 公开了具有高能量分辨率和高位置分辨率的伽马射线图像拾取装置。 康普顿相机通过在前面和后面布置两个电极分裂平面锗半导体探测器来构造。 该康普顿相机处理从平面电极分离锗检测器的阳极和阴极获得的检测信号,并且可以测量来自检测器表面的位置距离发生伽马射线的相互作用。 此外,关于与检测器的电极表面平行的方向,可以高精度地测量伽马射线的相互作用位置。因此,通过解决具有优异的康普顿散射的运动学公式来提高空间分辨率 准确性。

    Semiconductor dark image position sensitive device
    7.
    发明授权
    Semiconductor dark image position sensitive device 失效
    半导体暗图像位置敏感器件

    公开(公告)号:US06335523B1

    公开(公告)日:2002-01-01

    申请号:US09442504

    申请日:1999-11-18

    IPC分类号: H01L3100

    CPC分类号: H01L31/02024

    摘要: A semiconductor dark image position sensing device comprises a photoelectric layer generating a photoelectric current in a portion where light is input in response to intensity of the light input, a resistive element layer into which the photoelectric current generated in the photoelectric layer flows from a portion corresponding to the position of light input, a second resistive element disposed in association with the photoelectric layer for replenishing an insufficient amount of electric current with respect to the photoelectric current so as to flow the same into the resistive element layer in such that a distribution of electric current flowing into the resistive element layer corresponding to the position of light input becomes substantially uniform over a whole sensing region, and signal electric current output terminals disposed at the opposite ends of the second resistive element.

    摘要翻译: 半导体暗图像位置检测装置包括在响应于光输入的强度输入光的部分中产生光电流的光电层,在光电层中产生的光电流从对应的部分流入的电阻元件层 到光输入的位置,与光电层相关联地设置的第二电阻元件,用于补充相对于光电流的不足量的电流,以便将其流入电阻元件层,使得电 对应于光输入位置的电流元件层的电流在整个感测区域上变得基本均匀,并且设置在第二电阻元件的相对端的信号电流输出端子。

    Semiconductor image position sensitive device
    8.
    发明授权
    Semiconductor image position sensitive device 失效
    半导体图像位置敏感器件

    公开(公告)号:US06847025B1

    公开(公告)日:2005-01-25

    申请号:US09429080

    申请日:1999-10-29

    CPC分类号: H01L31/02024

    摘要: In order to reduce errors in sensing an image position derived from noise light such as background noise, a semiconductor image position sensing device is provided with a photoelectric layer generating a photoelectric current in a portion onto which light was input in response to intensity of the light input to the photoelectric layer, a resistance layer laminated on the photoelectric layer in which the photoelectric current generated in the photoelectric layer flows into a portion corresponding to that onto which the light was input, and signal current output terminals wherein the photoelectric current generated in the photoelectric layer is distributed in a ratio in response to a resistance value between the signal current output terminals and the resistance layer defined at a position where the photoelectric current flowed into the resistance layer and from which the photoelectric current is output as an electric current obtained by summing currents over the whole sensing sections altogether, comprising further a resistance subtracting a photoelectric current having a predetermined distribution of electric current density from photoelectric currents generated in respective portions of the photoelectric layer over the whole sensing sections, and the photoelectric current subtracted by means of the resistance being adapted to flow into the resistance layer.

    摘要翻译: 为了减少感测从诸如背景噪声的噪声光导出的图像位置的误差,半导体图像位置感测装置具有在响应于光的强度输入光的部分中产生光电流的光电层 输入到光电层,层叠在光电层中的光电层中产生的光电流的电阻层流入与输入光的层对应的部分,以及信号电流输出端,其中在 光电层响应于信号电流输出端子与限定在光电流流入电阻层的位置之间的电阻值并以光电流输出的电阻值的比例分布为电流,该电流值由 整个传感部分的总和电流a 总之,还包括在整个感测部分上从光电层的各个部分中产生的光电流减去具有预定电流密度分布的光电流的电阻,并且通过电阻减去的光电流适于流入 电阻层。