摘要:
In order to shorten initialization time, a flash type non-volatile semiconductor memory of the invention comprises a line decoder (2) for selecting all of word lines (WL1 to WLm), a word line voltage generator (3) for generating various voltage, a column decoder (4) for selecting or not selecting all of digit lines (DL1 to DLn). Erase pulse impression process is performed by supplying a positive first word line voltage to all the word lines (WL1 to WLm) selected, and an erase voltage (Vs) to a source line, leaving all the digit line floating. All of memory-cell-transistors (MC11 to MCmn) are erased by infusing hot carriers in their floating gates by way of avalanche breakdown caused between their sources and substrates. Depression discrimination is performed with a sense amplifier (8) by selecting all digit lines (DL1 to DLn) and supplying all word lines (WL1 to WLm) with a second word line voltage.
摘要:
A test circuit is incorporated in a semiconductor memory device including at least one ultraviolet erasable and electrically programmable non-volatile memory cell having a control gate and a floating gate. The test circuit comprises a switching circuit for selectively supplying the control gate of the memory cell with a voltage which is higher than a power supply voltage for ordinary reading a content of the memory cell, through a write voltage supply line used for writing data to the memory cell. The switching circuit makes it possible to test the written state of the memory cell with a voltage different from the normal reading power supply voltage.
摘要:
In a light curtain generating device comprising a pair of pillar assemblies for supporting arrays of light emitting and receiving units which are placed opposite to each other so as to form a light curtain for detecting an object between the pillar assemblies, the light emitting and receiving unit arrays each consist of a group of single-beam optical modules so that the length of the arrays of light emitting and receiving units and the pitches of the individual light emitting and receiving units can be selected at will. Therefore, the light curtain generating device can readily adapt itself to each particular application at low cost and in a highly precise manner.
摘要:
A direct current booster device has a booster which includes a plurality of N-channel MOS field-effect transistors (FETs) each having a gate terminal and a drain terminal joined together and connected in series in the same direction from the input side to the output side, and a plurality of capacitors to which two boosting clock signals of an opposite phase are provided, which are generated by a clock driver circuit and supplied alternately in a one-by-one corresponding relationship so that the two different boosting clock signals are inputted to each pair of adjacent gate-drain terminals of the FETs. A test circuit is provided, which has a plurality of N-channel MOS FETs, the source terminals of which are connected individually to the gate terminals of the FETs of the booster. The drain terminals of the MOS FETs of the test circuit are all connected in common to a test voltage supply terminal of the input unit for a testing voltage which is higher than a maximum voltage generated by the booster and applied to the capacitors. The gate terminals of the MOS FETs of the test circuit are all connected in common to a control signal terminal of a switching unit to which a control signal of a voltage up to the test voltage is supplied.
摘要:
The present invention provides a semiconductor device with small space factor, which controls the application of voltages higher than a power supply voltage to internal circuits. This device includes a first transistor provided with a semiconductor substrate of one conductive type, a first region of second conductivity type formed in the semiconductor substrate, a second region of the second conductivity type formed independent of the first region, a third region of the first conductivity type formed in the first region, and a fourth region of the first conductivity type formed in the first region independent of the third region, having the first region as its back gate, and a second transistor provided with a fifth region of the first conductivity type formed in the second region and a sixth region of the first conductivity type formed in the second region independent of the fifth region, having the second region as its back gate, wherein a back gate bias voltage higher than the power supply voltage applied to the second region is applied to the first region.
摘要:
A vehicle is provided with an opening and closing device for opening and closing the vehicle door. A hook mechanism holds the door in an open condition, an electric releasing actuator is operatively connected to the hook mechanism to unhook the hook mechanism for permitting the door to be moved in the closing direction, an electric driving device is adapted to move the door in the closing direction, and an operation device generates a signal for directing that the door be moved in the closing direction. In addition, a control device controls the operation of the electric releasing actuator based upon the signal from the operation device, and controls the electric driving device to initiate driving operation of the electric driving device after initiation of the operation of the electric releasing actuator.
摘要:
A door lock system has a closing mechanism for bringing an ajar condition of a door into a fully closed condition. The fully closed condition of the door is locked for the sake of safety by the locking operation of a locking-and-unlocking mechanism. The locked condition of the door is released by an unlocking operation of the locking-and-unlocking mechanism. Moreover, by actuating a double lock mechanism, the door under the locked condition is further brought into a double-looked condition under which the unlocking operation of the locking-and-unlocking mechanism cannot be established. The closing mechanism, the locking and-unlocking mechanism, and the double lock mechanism are driven by a common electric motor thus allowing the door lock mechanism to be reduced in size and manufactured less expensively.
摘要:
In an oscillation circuit, the Schmidt circuit generates the control signal of the first level when the charge-discharge voltage inputted from the capacitor shifts to a voltage higher than the first threshold voltage and generates the control signal of the second level when the charge-discharge voltage shifts to a level lower than the second threshold voltage. The switching circuit connects the second current source circuit with the capacitor when the control signal is of the first level and connects the first current source circuit with the capacitor when the control signal is of the second level.
摘要:
The object of the invention is to provide a water immersion detecting circuit, which is free from false detection and is stable and highly sensitive in operation. There is provide a water immersion detecting circuit provided on a printed board 11 of an electronic unit and used for detecting water immersion of the electronic unit based on a change of resistance generated between a pair of sensor electrodes for detecting water immersion P10, p11, wherein the pair of sensor electrodes P10, P11 are positioned opposite to each other on the printed board 11, and a U-shaped slit (opening) 12 is formed between the sensor electrodes P10, P11.
摘要:
A door lock assembly having a reduced size. The door lock assembly comprises: a closer mechanism for bringing a vehicle door from a partially closed state to a completely closed state; a locking/unlocking mechanism for bringing the vehicle door in the completely closed state to a locked state and an unlocked state; and a drive mechanism including a single motor acting as a drive source for actuating the closer mechanism and the locking/unlocking mechanism.