Planar speaker driver
    2.
    发明授权
    Planar speaker driver 有权
    平面扬声器驱动

    公开(公告)号:US08116512B2

    公开(公告)日:2012-02-14

    申请号:US11855148

    申请日:2007-09-13

    Applicant: Igor Levitsky

    Inventor: Igor Levitsky

    CPC classification number: H04R7/04 H04R9/025

    Abstract: A planar magnetic driver includes covering plates that are maintained under tension to form a buckled or curved surface, thereby providing for a larger magnetic gap, and allowing for a larger excursion of the diaphragm and extended lower frequency response. Another aspect of the driver includes a corrugated region along the periphery of the diaphragm, which provides increased internal dampening.

    Abstract translation: 平面磁驱动器包括保持在张力下以形成弯曲或弯曲表面的覆盖板,从而提供更大的磁隙,并允许隔膜更大的偏移和更低的频率响应。 驱动器的另一方面包括沿隔膜周边的波纹区域,其提供增加的内部阻尼。

    Planar speaker driver
    3.
    发明授权
    Planar speaker driver 有权
    平面扬声器驱动

    公开(公告)号:US08031901B2

    公开(公告)日:2011-10-04

    申请号:US11855146

    申请日:2007-09-13

    Applicant: Igor Levitsky

    Inventor: Igor Levitsky

    CPC classification number: H04R9/047 H04R2307/201 H04R2307/207

    Abstract: A planar magnetic driver includes covering plates that are maintained under tension to form a buckled or curved surface, thereby providing for a larger magnetic gap, and allowing for a larger excursion of the diaphragm and extended lower frequency response. Another aspect of the driver includes a corrugated region along the periphery of the diaphragm, which provides increased internal dampening.

    Abstract translation: 平面磁驱动器包括保持在张力下以形成弯曲或弯曲表面的覆盖板,从而提供更大的磁隙,并允许隔膜更大的偏移和更低的频率响应。 驱动器的另一方面包括沿隔膜周边的波纹区域,其提供增加的内部阻尼。

    Biplane Line Array Speaker with Arcuate Tweeter Array Providing Controlled Directivity
    4.
    发明申请
    Biplane Line Array Speaker with Arcuate Tweeter Array Providing Controlled Directivity 有权
    双平面线阵列扬声器与弧形高音数组提供受控方向性

    公开(公告)号:US20070110269A1

    公开(公告)日:2007-05-17

    申请号:US11539600

    申请日:2006-10-06

    Applicant: Igor Levitsky

    Inventor: Igor Levitsky

    CPC classification number: H04R1/26 H04R1/403 H04R2201/403

    Abstract: A biplane line array speaker includes a line array of tweeters mounted substantially directly in front of a line array of woofers. The tweeter line array is arcuately shaped to provide controlled vertical dispersion above and below the boundaries of the speaker cabinet. The woofers are displaced from the tweeters in stepped manner. The speaker cabinet is a rectangular box, allowing efficient wall mounting in single or multiple unit columns. IN multiple unit columns, the individual units acoustically couple to each other.

    Abstract translation: 双平面线阵列扬声器包括基本上直接安装在低音单元阵列前面的高音扬声器阵列。 高音线阵列呈弧形,以在扬声器机箱的边界上方和下方提供受控的垂直分散。 低音扬声器从高音扬声器中逐步流离失所。 扬声器柜是一个矩形盒,允许在单个或多个单元柱中高效地安装墙壁。 在多个单元列中,各个单元彼此声学耦合。

    Planar ribbon electro-acoustic transducer with high SPL capability and adjustable dipole/monopole low frequency radiation
    5.
    发明授权
    Planar ribbon electro-acoustic transducer with high SPL capability and adjustable dipole/monopole low frequency radiation 失效
    具有高SPL能力和可调偶极/单极低频辐射的平面带式电声换能器

    公开(公告)号:US07146019B2

    公开(公告)日:2006-12-05

    申请号:US10238043

    申请日:2002-09-05

    Applicant: Igor Levitsky

    Inventor: Igor Levitsky

    CPC classification number: H04R9/048

    Abstract: A planar electro-acoustic transducer has an adjustable back cap option that provides a dipole/monopole radiation that has different roll-off characteristics. The planar electro-acoustic transducer includes a diaphragm and a plurality of front and rear magnetic bars. Each magnetic bar has a side facing the diaphragm and disposed adjacent thereto. The thickness of each rear magnetic bar is larger than the thickness of each front magnetic bar. The thickness of each front magnetic bar is less than a quarter-wavelength of a cavity resonance at 10 kilohertz. The planar electro-acoustic transducer also includes a non-magnetic acoustically transparent metallic mesh that is disposed coplanarly with the sides of the front and rear magnetic bars that face the diaphragm.

    Abstract translation: 平面电声换能器具有可调的后盖选项,其提供具有不同滚降特性的偶极/单极辐射。 平面电声换能器包括隔膜和多个前后磁条。 每个磁棒具有面向隔膜的一侧并与其相邻设置。 每个后磁条的厚度大于每个前磁条的厚度。 每个前磁条的厚度小于10千赫的谐振共振的四分之一波长。 平面电声换能器还包括与面向隔膜的前后磁棒的侧面共面设置的非磁性声透明金属网。

    Biplane line array speaker with arcuate tweeter array providing controlled directivity
    9.
    发明授权
    Biplane line array speaker with arcuate tweeter array providing controlled directivity 有权
    双平面线阵列扬声器,带有弓形高音扬声器阵列,提供受控的方向性

    公开(公告)号:US08027493B2

    公开(公告)日:2011-09-27

    申请号:US11539600

    申请日:2006-10-06

    Applicant: Igor Levitsky

    Inventor: Igor Levitsky

    CPC classification number: H04R1/26 H04R1/403 H04R2201/403

    Abstract: A biplane line array speaker includes a line array of tweeters mounted substantially directly in front of a line array of woofers. The tweeter line array is arcuately shaped to provide controlled vertical dispersion above and below the boundaries of the speaker cabinet. The woofers are displaced from the tweeters in stepped manner. The speaker cabinet is a rectangular box, allowing efficient wall mounting in single or multiple unit columns. In multiple unit columns, the individual units acoustically couple to each other.

    Abstract translation: 双平面线阵列扬声器包括基本上直接安装在低音单元阵列前方的高音扬声器阵列。 高音线阵列呈弧形,以在扬声器机箱的边界上方和下方提供受控的垂直分散。 低音扬声器从高音扬声器中逐步流离失所。 扬声器柜是一个矩形盒,允许在单个或多个单元柱中高效地安装墙壁。 在多个单元列中,各个单元彼此声学耦合。

    Hybrid solar cells based on nanostructured semiconductors and organic materials

    公开(公告)号:US20060263922A1

    公开(公告)日:2006-11-23

    申请号:US11410796

    申请日:2006-04-25

    Abstract: A method for forming a photovoltaic cell which includes forming a nanostructured layer in a semiconductor material having a plurality of pores opening onto a surface, the plurality of pores having a depth greater than about 1 micron and a diameter between about 5 nanometers and about 1,200 nanometers, and disposing an organic charge-transfer material in the pores of the nanostructured layer. A first electrode is attached to the semiconductor material, and a second electrode is attached to the organic charge-transfer material. The semiconductor material has a thickness between about 5 microns and about 700 microns. Desirably, the nanostructured layer has a porosity of less than the porosity corresponding to the percolation threshold, and the organic charge-transfer material extends at least about 100 nm from the surface of the nanostructured layer. The organic charge-transfer material may partially cover the sides of the pores of the nanostructured layer thereby providing a generally cylindrical cavity therein.

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