VAPOUR DEPOSITION METHOD FOR FABRICATING LITHIUM-CONTAINING THIN FILM LAYERED STRUCTURES
    2.
    发明申请
    VAPOUR DEPOSITION METHOD FOR FABRICATING LITHIUM-CONTAINING THIN FILM LAYERED STRUCTURES 审中-公开
    用于制造含锂的薄膜层结构的蒸气沉积方法

    公开(公告)号:US20160336583A1

    公开(公告)日:2016-11-17

    申请号:US15110598

    申请日:2015-01-07

    Abstract: A vapour deposition method for preparing a multi-layered thin film structure comprises providing a vapour source of each component element of a compound intended for a first layer and a compound intended for a second layer, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source or sources of one or more glass-forming elements, and a source or sources of one or more transition metals; heating a substrate to a first temperature; co-depositing component elements from at least the vapour sources of lithium, oxygen and the one or more transition metals onto the heated substrate wherein the component elements react on the substrate to form a layer of a crystalline lithium-containing transition metal oxide compound; heating the substrate to a second temperature within a temperature range of substantially 170° C. or less from the first temperature; and co-depositing component elements from at least the vapour sources of lithium, oxygen and the one or more glass-forming elements onto the heated substrate wherein the component elements react on the substrate to form a layer of an amorphous lithium-containing oxide or oxynitride compound.

    Abstract translation: 一种用于制备多层薄膜结构的气相沉积方法包括提供旨在用于第一层的化合物的每个组分元素的蒸气源和用于第二层的化合物,其中所述蒸气源至少包含锂源 ,氧源,一种或多种玻璃形成元素的源或源,以及一种或多种过渡金属的源或源; 将基底加热至第一温度; 将至少来自锂,氧和一种或多种过渡金属的蒸汽源的组分元素共沉淀到加热的衬底上,其中组分元素在衬底上反应以形成结晶的含锂过渡金属氧化物化合物的层; 将基板加热到与第一温度基本上为170℃以下的温度范围内的第二温度; 以及将至少来自锂,氧和一种或多种玻璃形成元素的蒸汽源的组分元素共沉积到加热的衬底上,其中组分元素在衬底上反应以形成无定形含锂氧化物或氮氧化物的层 复合。

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