公开(公告)号：US20070141813A1

公开(公告)日：2007-06-21

申请号：US11598568

申请日：2006-11-14

Applicant: In-Jae Song

Inventor： In-Jae Song

IPC: H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/0203 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: A method of fabricating a plurality of freestanding GaN wafers includes mounting a GaN substrate in a reactor, forming a GaN crystal growth layer on the GaN substrate through crystal growth, performing surface processing of the GaN crystal growth layer to form a GaN porous layer having a predetermined thickness on the GaN crystal growth layer, repeating the forming of the GaN crystal growth layer and the forming of the GaN porous layer a plurality of times to form a stack of alternating GaN crystal growth layers and GaN porous layers on the GaN substrate, and cooling the stack such that the GaN layers self-separate to form the freestanding GaN wafers. The entire process of forming a GaN porous layer and a thick GaN layer is performed in-situ in a single reactor. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN surface processing and growth proceed using an HVPE process gas such that costs are greatly reduced. In particular, since GaN is self-separated from the substrate through cooling, a GaN wafer of good quality without the occurrence of cracks can be produced on a large scale with a high yield.

Abstract translation: 制造多个独立的GaN晶片的方法包括将GaN衬底安装在反应器中，通过晶体生长在GaN衬底上形成GaN晶体生长层，进行GaN晶体生长层的表面处理以形成具有 在GaN晶体生长层上预定的厚度，多次重复形成GaN晶体生长层和形成GaN多孔层，以在GaN衬底上形成交替的GaN晶体生长层和GaN多孔层的堆叠，以及 冷却堆叠，使得GaN层自分离以形成独立的GaN晶片。 在单个反应器中原位进行形成GaN多孔层和厚GaN层的整个过程。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN表面处理和生长，从而大大降低成本。 特别地，由于GaN是通过冷却从衬底自分离的，所以可以以高产率大规模生产质量好的GaN晶片而不产生裂纹。

公开(公告)号：US07998272B2

公开(公告)日：2011-08-16

申请号：US11598568

申请日：2006-11-14

Applicant: In-Jae Song

Inventor： In-Jae Song

IPC: C30B29/06

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/0203 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: A method of fabricating a plurality of freestanding GaN wafers includes mounting a GaN substrate in a reactor, forming a GaN crystal growth layer on the GaN substrate through crystal growth, performing surface processing of the GaN crystal growth layer to form a GaN porous layer having a predetermined thickness on the GaN crystal growth layer, repeating the forming of the GaN crystal growth layer and the forming of the GaN porous layer a plurality of times to form a stack of alternating GaN crystal growth layers and GaN porous layers on the GaN substrate, and cooling the stack such that the GaN layers self-separate to form the freestanding GaN wafers. The entire process of forming a GaN porous layer and a thick GaN layer is performed in-situ in a single reactor. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN surface processing and growth proceed using an HVPE process gas such that costs are greatly reduced. In particular, since GaN is self-separated from the substrate through cooling, a GaN wafer of good quality without the occurrence of cracks can be produced on a large scale with a high yield.

Abstract translation: 制造多个独立的GaN晶片的方法包括将GaN衬底安装在反应器中，通过晶体生长在GaN衬底上形成GaN晶体生长层，进行GaN晶体生长层的表面处理以形成具有 在GaN晶体生长层上预定的厚度，多次重复形成GaN晶体生长层和形成GaN多孔层，以在GaN衬底上形成交替的GaN晶体生长层和GaN多孔层的堆叠，以及 冷却堆叠，使得GaN层自分离以形成独立的GaN晶片。 在单个反应器中原位进行形成GaN多孔层和厚GaN层的整个过程。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN表面处理和生长，从而大大降低成本。 特别地，由于GaN是通过冷却从衬底自分离的，所以可以以高产率大规模生产质量好的GaN晶片而不产生裂纹。

公开(公告)号：US08349076B2

公开(公告)日：2013-01-08

申请号：US11545518

申请日：2006-10-11

Applicant: In-Jae Song ,  Jai-yong Han

Inventor： In-Jae Song ,  Jai-yong Han

IPC: C30B25/00

CPC classification number: C30B33/06 ,  C30B25/183 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664

Abstract: A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the GaN substrate and forming a porous GaN layer; forming a GaN crystal growth layer on the porous GaN layer; and cooling the GaN substrate on which the GaN crystal growth layer has been formed and separating the GaN crystal growth layer from the substrate. According to the fabrication method, the entire process including forming a porous GaN layer and a thick GaN layer is performed in-situ within a single reactor. The method is significantly simplified compared to a conventional fabrication method. The fabrication method enables the entire process to be performed in one chamber while allowing GaN surface treatment and growth to be performed using HVPE process gases, thus resulting in a significant reduction in manufacturing costs. The fabrication method also allows self-separation of thick GaN without cracking, thus achieving a short process time and a high manufacturing yield.

Abstract translation: 制造独立氮化镓（GaN）衬底的方法包括：在反应器内制备GaN衬底; 将HCl和NH 3气体供应到反应器中以处理GaN衬底的表面并形成多孔GaN层; 在多孔GaN层上形成GaN晶体生长层; 并冷却已经形成GaN晶体生长层的GaN衬底，并从衬底分离出GaN晶体生长层。 根据制造方法，在单个反应器内原位进行包括形成多孔GaN层和厚GaN层的整个工艺。 与常规制造方法相比，该方法显着简化。 该制造方法能够在一个室中进行整个工艺，同时使用HVPE工艺气体进行GaN表面处理和生长，从而显着降低制造成本。 制造方法还允许厚的GaN的自分离而不产生裂纹，从而实现短的工艺时间和高的制造成品率。

公开(公告)号：US20070082465A1

公开(公告)日：2007-04-12

申请号：US11545518

申请日：2006-10-11

Applicant: In-Jae Song ,  Jai-yong Han

Inventor： In-Jae Song ,  Jai-yong Han

IPC: H01L21/20

CPC classification number: C30B33/06 ,  C30B25/183 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664

Abstract: A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the GaN substrate and forming a porous GaN layer; forming a GaN crystal growth layer on the porous GaN layer; and cooling the GaN substrate on which the GaN crystal growth layer has been formed and separating the GaN crystal growth layer from the substrate. According to the fabrication method, the entire process including forming a porous GaN layer and a thick GaN layer is performed in-situ within a single reactor. The method is significantly simplified compared to a conventional fabrication method. The fabrication method enables the entire process to be performed in one chamber while allowing GaN surface treatment and growth to be performed using HVPE process gases, thus resulting in a significant reduction in manufacturing costs. The fabrication method also allows self-separation of thick GaN without cracking, thus achieving a short process time and a high manufacturing yield.

Abstract translation: 制造独立氮化镓（GaN）衬底的方法包括：在反应器内制备GaN衬底; 将HCl和NH 3气体供应到反应器中以处理GaN衬底的表面并形成多孔GaN层; 在多孔GaN层上形成GaN晶体生长层; 并冷却已经形成GaN晶体生长层的GaN衬底，并从衬底分离出GaN晶体生长层。 根据制造方法，在单个反应器内原位进行包括形成多孔GaN层和厚GaN层的整个工艺。 与常规制造方法相比，该方法显着简化。 该制造方法能够在一个室中进行整个工艺，同时使用HVPE工艺气体进行GaN表面处理和生长，从而显着降低制造成本。 制造方法还允许厚的GaN的自分离而不产生裂纹，从而实现短的工艺时间和高的制造成品率。