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公开(公告)号：US10924703B2
公开(公告)日：2021-02-16
申请号：US16689103
申请日：2019-11-20
IPC分类号： H04N5/378 , H04N5/347 , H04N5/361 , H01L27/146 , H04N5/232 , G02B23/12 , G02B5/20 , H04N5/33
摘要： Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.
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公开(公告)号：US10652486B2
公开(公告)日：2020-05-12
申请号：US16341898
申请日：2017-10-19
IPC分类号： H04N5/355 , H01L27/146
摘要： Imaging apparatus (100, 200, 300) includes a photosensitive medium (302) configured to convert incident photons into pairs of electrons and holes. An array of pixel circuits (304) is formed on a semiconductor substrate (305). Each pixel circuit defines a respective pixel and includes an electron-collecting electrode (306, 502) in contact with the photosensitive medium at a first location in the pixel and a hole-collecting electrode (308, 504) in contact with the photosensitive medium at a second location in the pixel. Circuitry (800, 1000) is coupled to apply a positive potential to and collect the electrons from the electron-collecting electrode and to apply a negative potential to and collect the holes from the hole-collecting electrode and to output a signal indicative of an intensity of the incident photons responsively to the collected electrons and holes.
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公开(公告)号：US20180220097A1
公开(公告)日：2018-08-02
申请号：US15939323
申请日：2018-03-29
IPC分类号： H04N5/378 , H04N5/361 , H04N5/347 , H01L27/146 , H04N5/232 , G02B23/12 , H04N5/33 , G02B5/20
CPC分类号： H04N5/378 , G02B5/208 , G02B23/12 , H01L27/14607 , H01L27/1461 , H01L27/14621 , H01L27/14625 , H01L27/14649 , H01L27/14665 , H01L27/14667 , H01L27/14669 , H04N5/23241 , H04N5/23245 , H04N5/33 , H04N5/347 , H04N5/361
摘要： Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.
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公开(公告)号：US20170264836A1
公开(公告)日：2017-09-14
申请号：US15456312
申请日：2017-03-10
摘要： In various embodiments, an image sensor and related method are disclosed. In an embodiment, an image sensor includes an optically sensitive material, and a pixel circuit including a sense node in electrical communication with the optically sensitive material. The pixel circuit stores an electrical signal proportional to an intensity of light incident on the optically sensitive material during an integration period. The pixel circuit includes a differential transistor pair in electrical communication with the optically sensitive material. The differential transistor pair includes a first transistor and a second transistor, with the first transistor being disposed between the optically sensitive material and the sense node. The differential transistor pair steers current between the optically sensitive material and the sense node through the first transistor during the integration period and steers current through the second transistor after the integration period to discontinue integration of the electrical signal onto the sense node.
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公开(公告)号：US20160037093A1
公开(公告)日：2016-02-04
申请号：US14813597
申请日：2015-07-30
CPC分类号： H04N5/351 , H01L27/14665 , H01L2224/48091 , H04N5/32 , H04N5/347 , H04N5/374 , H04N9/045 , H01L2924/00014
摘要： In various embodiments, an image sensor and related method are disclosed. In an embodiment, an image sensor includes an optically sensitive material, and a pixel circuit including a sense node in electrical communication with the optically sensitive material. The pixel circuit stores an electrical signal proportional to an intensity of light incident on the optically sensitive material during an integration period. The pixel circuit includes a differential transistor pair in electrical communication with the optically sensitive material. The differential transistor pair includes a first transistor and a second transistor, with the first transistor being disposed between the optically sensitive material and the sense node. The differential transistor pair steers current between the optically sensitive material and the sense node through the first transistor during the integration period and steers current through the second transistor after the integration period to discontinue integration of the electrical signal onto the sense node.
摘要翻译： 在各种实施例中，公开了一种图像传感器和相关方法。 在一个实施例中，图像传感器包括光敏材料，以及包括与光敏材料电连通的感测节点的像素电路。 像素电路在积分期间存储与入射到光敏材料上的光的强度成比例的电信号。 像素电路包括与光敏材料电连通的差分晶体管对。 差分晶体管对包括第一晶体管和第二晶体管，其中第一晶体管设置在光敏材料和感测节点之间。 差分晶体管对在积分周期期间通过第一晶体管在光敏材料和感测节点之间引导电流，并且在积分周期之后引导通过第二晶体管的电流，以停止将电信号整合到感测节点上。
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公开(公告)号：US10735672B2
公开(公告)日：2020-08-04
申请号：US16341901
申请日：2017-10-19
发明人： Jae Park , Carey Tanner , Emanuele Mandelli
IPC分类号： H04N5/361 , H04N5/33 , H01L27/146 , H04N5/345 , H04N5/359 , H04N5/369 , H04N5/374 , H04N9/04
摘要： Imaging apparatus (100, 200, 1200) includes a semiconductor substrate (312) and an array (202) of pixel circuits (1202, 1204), which are arranged in a matrix on the semiconductor substrate and define respective pixels (212) of the apparatus. Pixel electrodes (1208) are respectively coupled to the pixel circuits, and a photosensitive (1206) is formed over the pixel electrodes. A common electrode (1207), which is at least partially transparent, is formed over the photosensitive film. An opaque metallization layer (1214) is formed over the photosensitive film on one or more of the pixels and coupled in ohmic contact to the common electrode. Control circuitry (208, 1212) is coupled to apply a bias to the common electrode via the opaque metallization layer while correcting a black level of the output values from the pixels using the signals received from the one or more of the pixels over which the opaque metallization layer is formed.
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公开(公告)号：US10516845B2
公开(公告)日：2019-12-24
申请号：US15939323
申请日：2018-03-29
IPC分类号： H04N5/378 , H01L27/146 , H04N5/232 , H04N5/347 , H04N5/361 , G02B5/20 , H04N5/33 , G02B23/12
摘要： Various embodiments comprise apparatuses and methods including a light sensor. In one embodiment, an integrated circuit includes an image sensing array region, a first photosensor having a light-sensitive region outside of the image sensing array region, and control circuitry. The control circuitry is arranged in a first mode to read out image data from the image sensing array region, where the data provide information indicative of an image incident on the image sensing array region of the integrated circuit. The control circuitry is arranged in a second mode to read out a signal from the first photosensor indicative of intensity of light incident on the light-sensitive region of the first photosensor. Electrical power consumed by the integrated circuit during the second mode is at least ten times lower than electrical power consumed by the integrated circuit during the first mode. Additional methods and apparatuses are described.
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公开(公告)号：US20190253643A1
公开(公告)日：2019-08-15
申请号：US16341905
申请日：2017-10-19
发明人： Naveen Kolli , Emanuele Mandelli , Nicola Galante
IPC分类号： H04N5/33 , H01L27/146
CPC分类号： H04N5/332 , H01L27/14605 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14645 , H01L27/14649 , H01L27/14665 , H01L27/14685 , H01L27/14689 , H04N5/345 , H04N5/359 , H04N5/3594 , H04N5/361 , H04N5/3696 , H04N5/374 , H04N9/045
摘要： Imaging apparatus (1300, 1400, 1500) includes a semiconductor substrate (1302), which includes at least first and second sensing areas (1306, 1308, 1502, 1514) with a predefined separation between the sensing areas. First and second arrays of pixel circuits (1312) are formed respectively on the first and second sensing areas and define respective first and second matrices of pixels. First and second photosensitive films (1314, 1316, 1402) are disposed respectively over the first and second arrays of pixel circuits, and are configured to output photocharge to the pixel circuits in response to radiation incident on the apparatus in different, respective first and second spectral bands.
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公开(公告)号：US20170208273A1
公开(公告)日：2017-07-20
申请号：US15406740
申请日：2017-01-15
发明人： Emanuele Mandelli , Nikolai Bock
CPC分类号： H04N5/35572 , H04N5/3535 , H04N5/3559 , H04N5/363 , H04N5/378
摘要： In various embodiments, an electronic image sensor having extended dynamic range comprises, for example, a pixel circuit and a column readout circuit. The column readout circuit includes, for example, a correlated double-sampling (CDS) capacitor, one or more CDS clamp switches, a single slope analog-to-digital converter (ADC) circuit, and a column memory. Other devices and methods are disclosed.
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公开(公告)号：US10681296B2
公开(公告)日：2020-06-09
申请号：US15987943
申请日：2018-05-24
IPC分类号： H04N5/378 , H04N5/3745 , H04N5/232 , H04N5/33 , H04N5/361 , H01L27/146
摘要： In various embodiments, methods and related apparatuses for sealing down pixel sizes in quantum film-based image sensors are disclosed. In one embodiment, an image sensor circuit is disclosed that includes circuit includes an optically sensitive layer, a first pixel having a first electrode coupled to a first region of optically sensitive layer, a second pixel having a second electrode coupled to a second region of optically sensitive layer, and a readout circuit having at least one transistor that is shared among the first pixel and the second pixel. In a first time interval, the transistor is used in a readout of a signal related to illumination of the first pixel over an integration period. During a second time interval, the transistor is used in a readout of a signal related to illumination of the second pixel over an integration pixel. The signals thusly read constitute a time-domain multiplexed (TDM) signal.
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