MEMORY DEVICE
    3.
    发明申请
    MEMORY DEVICE 有权
    内存设备

    公开(公告)号:US20160141023A1

    公开(公告)日:2016-05-19

    申请号:US14942263

    申请日:2015-11-16

    IPC分类号: G11C11/419

    CPC分类号: G11C11/419 G11C7/18

    摘要: Disclosed is a memory device. The memory device includes a bit-cell comprising a cross-coupled inverter and pass gate transistor connected to data storage node of the cross-coupled inverter, a read buffer transistor having a drain terminal connected to a bit line for read operation and a gate terminal connected to the pass gate transistor, a write operation transistor connected between the pass gate transistor and a bit line for write operation, and a drive transistor unit which is connected to a local line between the pass gate transistors and the write operation transistor and which provide a voltage to a gate terminal of the read buffer transistor based on a data value stored at the bit-cell.

    摘要翻译: 公开了一种存储装置。 存储器件包括一个位单元,它包括一个与交叉耦合的反相器的数据存储节点连接的交叉耦合的反相器和通过栅极晶体管,一个读取缓冲晶体管,其具有连接到位线用于读取操作的漏极端子和一个栅极端子 连接到通栅晶体管,连接在通栅晶体管和用于写操作的位线之间的写操作晶体管,以及驱动晶体管单元,其连接到通栅晶体管和写操作晶体管之间的局部线,并且提供 基于存储在位单元的数据值,读取缓冲晶体管的栅极端子的电压。