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公开(公告)号：US11286158B2
公开(公告)日：2022-03-29
申请号：US16287232
申请日：2019-02-27
Applicant: Infineon Technologies AG
Inventor： Christian Ranacher , Banafsheh Abasahl , Cristina Consani , Thomas Grille , Peter Irsigler , Andreas Tortschanoff
Abstract: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.
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公开(公告)号：US20190270640A1
公开(公告)日：2019-09-05
申请号：US16287232
申请日：2019-02-27
Applicant: Infineon Technologies AG
Inventor： Christian Ranacher , Banafsheh Abasahl , Cristina Consani , Thomas Grille , Peter Irsigler , Andreas Tortschanoff
Abstract: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.
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公开(公告)号：US11322911B2
公开(公告)日：2022-05-03
申请号：US16797522
申请日：2020-02-21
Applicant: Infineon Technologies AG
Inventor： Banafsheh Abasahl , Cristina Consani , Thomas Grille , Bernhard Jakoby , Reyhaneh Jannesari , Andreas Tortschanoff
IPC: H01S5/22 , G01N21/3504 , G01N29/22
Abstract: An emitter for emitting electromagnetic radiation includes a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio, wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio.
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公开(公告)号：US11193885B2
公开(公告)日：2021-12-07
申请号：US16803031
申请日：2020-02-27
Applicant: Infineon Technologies AG
Inventor： Andreas Tortschanoff , Cristina Consani , Thomas Grille , Peter Irsigler , Christian Ranacher
IPC: G01J5/02 , G01N21/3504 , G01N33/00
Abstract: In accordance with an embodiment, a gas sensor includes a substrate having a cavity for providing an optical interaction path; a thermal emitter configured to emit broadband IR radiation; a wavelength selective structure configured to filter the broadband IR radiation emitted by the thermal emitter; and an IR detector configured to provide a detector output signal based on a strength of the filtered IR radiation having traversed the optical interaction path.
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公开(公告)号：US20200284721A1
公开(公告)日：2020-09-10
申请号：US16803031
申请日：2020-02-27
Applicant: Infineon Technologies AG
Inventor： Andreas Tortschanoff , Cristina Consani , Thomas Grille , Peter Irsigler , Christian Ranacher
IPC: G01N21/3504 , G01N33/00
Abstract: In accordance with an embodiment, a gas sensor includes a substrate having a cavity for providing an optical interaction path; a thermal emitter configured to emit broadband IR radiation; a wavelength selective structure configured to filter the broadband IR radiation emitted by the thermal emitter; and an IR detector configured to provide a detector output signal based on a strength of the filtered IR radiation having traversed the optical interaction path.
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Patent Agency Ranking
公开(公告)号：US20230125167A1
公开(公告)日：2023-04-27
申请号：US18046231
申请日：2022-10-13
Applicant: Infineon Technologies AG
Inventor： Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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公开(公告)号：US12050340B2
公开(公告)日：2024-07-30
申请号：US18046231
申请日：2022-10-13
Applicant: Infineon Technologies AG
Inventor： Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
CPC classification number: G02B6/102 , G02B6/1223 , G02B2006/12104
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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公开(公告)号：US11506599B2
公开(公告)日：2022-11-22
申请号：US16829364
申请日：2020-03-25
Applicant: Infineon Technologies AG
Inventor： Thomas Grille , Cristina Consani , Peter Irsigler , Bernhard Jakoby , Thomas Krotscheck Ostermann , Gerald Puehringer , Christian Ranacher , Andreas Tortschanoff
IPC: H01L31/0232 , H01L31/0368 , H01L31/16 , H01L31/18 , G01N21/3518 , H01L31/0216
Abstract: A fluid sensor includes a substrate having a top main surface region, wherein the top main surface region of the substrate forms a common system plane of the fluid sensor, a thermal radiation emitter on the top main surface region of the substrate, an optical filter structure on the top main surface region of the substrate, a waveguide on the main top surface region of the substrate, and a thermal radiation detector on the top main surface region of the substrate, wherein the thermal radiation detector provides a detector output signal based on a radiation strength of the filtered thermal radiation received from the waveguide.
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公开(公告)号：US11320586B2
公开(公告)日：2022-05-03
申请号：US16810442
申请日：2020-03-05
Applicant: Infineon Technologies AG
Inventor： Andreas Tortschanoff , Cristina Consani , Thomas Grille , Bernhard Jakoby , Christian Ranacher
Abstract: In accordance with an embodiment, a bandpass transmission filter having a center wavelength of transmission includes: a waveguide structure comprising a grating structure having changing grating pitch values configured to diffract radiation in the waveguide structure having a first wavelength lower than the center wavelength of transmission, and configured to reflect radiation in the waveguide structure having a second wavelength higher than the center wavelength of transmission; and a radiation absorbing structure configured to absorb radiation guided by the waveguide structure having a third wavelength higher than the second wavelength, wherein the radiation absorbing structure is an integrated part of the waveguide structure or comprises a layer arranged adjacent to the waveguide structure.
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公开(公告)号：US20200313396A1
公开(公告)日：2020-10-01
申请号：US16797522
申请日：2020-02-21
Applicant: Infineon Technologies AG
Inventor： Banafsheh Abasahl , Cristina Consani , Thomas Grille , Bernhard Jakoby , Reyhaneh Jannesari , Andreas Tortschanoff
IPC: H01S5/22 , G01N29/22 , G01N21/3504
Abstract: An emitter for emitting electromagnetic radiation includes a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio, wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio.
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