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公开(公告)号:US20240210522A1
公开(公告)日:2024-06-27
申请号:US18598596
申请日:2024-03-07
Applicant: Infineon Technologies AG
Inventor: Saverio Trotta , Reinhard-Wolfgang Jungmaier , Dennis Noppeney , Ashutosh Baheti , Ismail Nasr , Jagjit Singh Bal
CPC classification number: G01S7/032 , G01S7/003 , G01S7/006 , G01S13/343 , G01S2013/0245
Abstract: In accordance with an embodiment, a method of operating a radar system includes receiving radar configuration data from a host, and receiving a start command from the host after receiving the radar configuration data. The radar configuration data includes chirp parameters and frame sequence settings. After receiving the start command, configuring a frequency generation circuit is configured with the chirp parameters and radar frames are triggered at a preselected rate.
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公开(公告)号:US11870130B2
公开(公告)日:2024-01-09
申请号:US16939392
申请日:2020-07-27
Applicant: Infineon Technologies AG
Inventor: Eung San Cho , Ashutosh Baheti , Saverio Trotta
IPC: H01Q1/22 , H01L23/66 , H01L23/498 , H01L21/48
CPC classification number: H01Q1/2283 , H01L21/486 , H01L21/4853 , H01L21/4857 , H01L23/49816 , H01L23/66 , H01L2223/6677
Abstract: A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.
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公开(公告)号:US11640208B2
公开(公告)日:2023-05-02
申请号:US16691021
申请日:2019-11-21
Applicant: Infineon Technologies AG
Inventor: Souvik Hazra , Ashutosh Baheti , Avik Santra
Abstract: A method for operating a distributed neural network having a plurality of intelligent devices and a server includes: generating, by a first intelligent device of the plurality of intelligent devices, a first output using a first neural network model running on the first intelligent device and using a first input vector to the first neural network model; outputting, by the first intelligent device, the first output; receiving, by the first intelligent device, a gesture feedback on the first output from a user; determining, by the first intelligent device, a user rating of the first output from the gesture feedback; labeling, by the first intelligent device, the first input vector with a first label in accordance with the user rating; and training, by the first intelligent device, the first neural network model using the first input vector and the first label.
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公开(公告)号:US20220382381A1
公开(公告)日:2022-12-01
申请号:US17818513
申请日:2022-08-09
Applicant: Infineon Technologies AG
Inventor: Ashutosh Baheti , Reinhard-Wolfgang Jungmaier , Saverio Trotta , Avik Santra
IPC: G06F3/01
Abstract: An earphone device includes a housing comprising a top region and a bottom region, an acoustic transducer disposed in the bottom region of the housing, and a radar system disposed in the top region of the housing. The radar system includes a first side and an opposite second side. The radar system is configured to detect a first object located on the first side of the radar system, and detect biometric data from a second object located on the second side of the radar system.
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公开(公告)号:US20220148951A1
公开(公告)日:2022-05-12
申请号:US17544221
申请日:2021-12-07
Applicant: Infineon Technologies AG
Inventor: Ngoc-Hoa Huynh , Franz-Xaver Muehlbauer , Claus Waechter , Veronika Theyerl , Dominic Maier , Thomas Kilger , Saverio Trotta , Ashutosh Baheti , Georg Meyer-Berg , Maciej Wojnowski
IPC: H01L23/498 , H01L23/367 , H01L23/538 , H01Q9/28 , H01Q1/22 , H01Q9/04 , H01Q21/06 , H01L21/56 , H01L23/31
Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.
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公开(公告)号:US20220085484A1
公开(公告)日:2022-03-17
申请号:US17022408
申请日:2020-09-16
Applicant: Infineon Technologies AG
Inventor: Eung San Cho , Ashutosh Baheti , Saverio Trotta
Abstract: A semiconductor system includes a semiconductor chip comprising a RF circuit, a buffer layer over the RF circuit and a plurality of bumps over the buffer layer, wherein the plurality of bumps comprising at least one functional bump electrically connected to the RF circuit, and at least one dummy bump which is maintained at a distance from the RF circuit and prevented from being electrically connected to the RF circuit by the buffer layer, a conductive layer disposed over the semiconductor chip and coupled to the plurality of bumps through a plurality of vias, a feedline structure disposed over the conductive layer, wherein the feedline structure is electrically coupled to the RF circuit, and a plurality of antennas disposed over the feedline structure, wherein at least one antenna of the plurality of antennas is coupled to the RF circuit through the feedline structure.
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公开(公告)号:US20220077592A1
公开(公告)日:2022-03-10
申请号:US17461080
申请日:2021-08-30
Applicant: Infineon Technologies AG
Inventor: Nadine Pfuhl , Marwa Abdel-Aziz , Ashutosh Baheti , Saverio Trotta
Abstract: An electronic device includes a housing, an electrically conductive layer and millimeter-wave (mmw) circuitry configured to emit a mmw signal. The mmw circuitry is arranged in the housing and on a first side of the electrically conductive layer. The housing comprises at least one portion configured as a dielectric lens to refract the mmw signal at least partially outside the housing towards a second side opposite to the first side of the electrically conductive layer.
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公开(公告)号:US20220059925A1
公开(公告)日:2022-02-24
申请号:US16997415
申请日:2020-08-19
Applicant: Infineon Technologies AG
Inventor: Eung San Cho , Ashutosh Baheti , Saverio Trotta
IPC: H01Q1/22 , H01L23/00 , H01L23/498 , H01L23/66
Abstract: A semiconductor device comprises a semiconductor chip comprising a radio frequency (RF) circuit, a feedline structure coupled to the RF circuit, and an antenna structure comprising a main body stretching along a direction orthogonal to at least one side of a front side and a backside of the semiconductor device, wherein the antenna structure is coupled to the RF circuit through the feedline structure.
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公开(公告)号:US11204411B2
公开(公告)日:2021-12-21
申请号:US15897632
申请日:2018-02-15
Applicant: Infineon Technologies AG
Inventor: Reinhard-Wolfgang Jungmaier , Saverio Trotta , Ashutosh Baheti , Jagjit Singh Bal
IPC: G01S7/41 , G01S7/35 , G01S13/06 , G01S13/88 , G01S7/03 , G01S13/87 , G01S13/02 , G01S13/34 , G01S7/02
Abstract: A method of operating a radar system includes transmitting a plurality of transmitted radio frequency (RF) signals by a plurality of directional antennas. The plurality of directional antennas is disposed on a planar surface of a substrate. Each of the plurality of antennas is in a fixed orientation and position on the planar surface. A respective individual coverage of each of the plurality of directional antennas is less than 360°. A combined coverage of the plurality of transmitted RF signals completely covers a 360° region surrounding the radar system. The method also includes receiving a reflected RF signal by a directional antenna of the plurality of directional antennas.
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公开(公告)号:US20210033668A1
公开(公告)日:2021-02-04
申请号:US16528199
申请日:2019-07-31
Applicant: Infineon Technologies AG
Inventor: Saverio Trotta , Ashutosh Baheti , Reinhard-Wolfgang Jungmaier , Dennis Noppeney
IPC: G01R31/302 , G01R1/04 , H01Q1/22 , H04B17/17
Abstract: A test assembly for testing an antenna-in-package (AiP) device includes a socket over a circuit board, where the socket includes an opening for receiving the AiP device; a plunger configured to move along sidewalls of the opening, where during testing of the AiP device, the plunger is configured to cause the AiP device to be pressed towards the circuit board such that the AiP device is operatively coupled to the circuit board via input/output connections of the AiP device and of the circuit board; and a loadboard disposed within the socket and between the plunger and the AiP device, where the loadboard includes a coupling structure configured to be electromagnetically coupled to a transmit antenna and to a receive antenna of the AiP device, so that testing signals transmitted by the transmit antenna are conveyed to the receive antenna externally relative to the AiP device through the coupling structure.
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