公开(公告)号：US20170309484A1

公开(公告)日：2017-10-26

申请号：US15136573

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Mihai Draghici ,  Romain Esteve ,  Craig Arthur Fisher ,  Gerald Unegg ,  Tobias Hoechbauer ,  Christian Heidorn

IPC: H01L21/225 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  H01L21/324 ,  H01L21/04

CPC classification number: H01L21/2254 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0273 ,  H01L21/0455 ,  H01L21/31111 ,  H01L21/324 ,  H01L29/1608

Abstract: A method of defect reduction for a SiC layer includes activating dopants disposed in the SiC layer, depositing a carbon-rich layer on the SiC layer after activating the dopants, tempering the carbon-rich layer so as to form graphite on the SiC layer, and diffusing carbon from the graphite into the SiC layer. Carbon diffused from the graphite fills carbon vacancies in the SiC layer.