POWER ELECTRONICS SYSTEM, METHOD FOR FABRICATING A POWER ELECTRONICS SYSTEM AND METHOD FOR PROTECTING A HALF BRIDGE CIRCUIT FROM AN OVERLOAD OR OVERCURRENT

    公开(公告)号:US20230412066A1

    公开(公告)日:2023-12-21

    申请号:US18090096

    申请日:2022-12-28

    CPC classification number: H02M1/32 H02M7/5387 H02M7/003

    Abstract: A power electronics system includes: a power semiconductor module with opposite first and second sides and lateral sides connecting the first and second sides. The power semiconductor module includes: at least one power semiconductor die forming at least one part of a half bridge circuit, an encapsulation encapsulating the power semiconductor die, and an external contact configured as a direct current contact of the half bridge circuit and exposed from the encapsulation at a lateral side of the power semiconductor module. A driver module arranged over the first side of the power semiconductor module is configured to control the half bridge circuit. A differential Hall sensor arranged over the external contact is configured to detect a direct current flowing through the external contact. The driver module is configured to modify a control pattern of the half bridge circuit based on a direct current value detected by the differential Hall sensor.

    Power electronics system, method for fabricating a power electronics system and method for protecting a half bridge circuit from an overload or overcurrent

    公开(公告)号:US12218578B2

    公开(公告)日:2025-02-04

    申请号:US18090096

    申请日:2022-12-28

    Abstract: A power electronics system includes: a power semiconductor module with opposite first and second sides and lateral sides connecting the first and second sides. The power semiconductor module includes: at least one power semiconductor die forming at least one part of a half bridge circuit, an encapsulation encapsulating the power semiconductor die, and an external contact configured as a direct current contact of the half bridge circuit and exposed from the encapsulation at a lateral side of the power semiconductor module. A driver module arranged over the first side of the power semiconductor module is configured to control the half bridge circuit. A differential Hall sensor arranged over the external contact is configured to detect a direct current flowing through the external contact. The driver module is configured to modify a control pattern of the half bridge circuit based on a direct current value detected by the differential Hall sensor.

    POWER SEMICONDUCTOR MODULE WITH CURRENT SENSOR ROTATION BAR

    公开(公告)号:US20230009758A1

    公开(公告)日:2023-01-12

    申请号:US17368213

    申请日:2021-07-06

    Abstract: A power semiconductor module includes: an electrically insulative frame having opposite mounting sides and a border wall that defines a periphery of the frame; a substrate seated in the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the border wall; a receptable in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and a rotation bar jutting out from a sidewall of the receptable and onto the exposed part of the busbar without obstructing the opening in the busbar, wherein the rotation bar forms an axis of rotation within the receptable. A power electronic assembly that incorporates the power semiconductor module and corresponding method of production are also described.

    Magnetic current sensor integration into high current connector device

    公开(公告)号:US11349265B2

    公开(公告)日:2022-05-31

    申请号:US17019860

    申请日:2020-09-14

    Abstract: A power connector is provided that is configured to conduct a current. The power connector includes a conductive frame including a base structure, an extension structure, and a cap structure that define a connector volume. The base structure is coupled to an output node of a primary conductor and receives the current from the primary conductor. The cap structure is configured to mechanically couple the power connector to a load and outputs the current from the power connector to the load. The extension structure is coupled to and extends between the base structure and the cap structure. The extension structure includes a current constriction region configured to cause a defined magnetic field of the current flowing through the current constriction region at a position of a magnetic current sensor that generates a sensor signal based on the defined magnetic field produced by the current flowing through the current constriction region.

    Magnetic current sensor integration into high current connector device

    公开(公告)号:US11901675B2

    公开(公告)日:2024-02-13

    申请号:US17825054

    申请日:2022-05-26

    CPC classification number: H01R13/6683 G01R15/202 G01R15/205 G01R15/207

    Abstract: A power connector is provided that is configured to conduct a current and includes a conductive frame including a base structure, an extension structure, and a cap structure that define a current path for the current. The base structure is configured to be coupled to a current supply for receiving the current therefrom. The cap structure is configured to be coupled to an electrical interface of a device to be supplied with the current and outputs the current from the connector to the electrical interface of the device. The extension structure is coupled to and vertically extends between the base structure and the cap structure. The extension structure includes a current constriction region that is configured to cause a defined magnetic field of the current flowing through the current constriction region at a predefined position.

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