公开(公告)号：US20180061962A1

公开(公告)日：2018-03-01

申请号：US15724604

申请日：2017-10-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

IPC: H01L29/66 ,  H01L29/872 ,  H01L29/861 ,  H01L21/265 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/36 ,  H01L29/739 ,  H01L29/78 ,  H01L29/74 ,  H01L29/40 ,  H01L29/06 ,  H01L29/165 ,  H01L21/22

CPC classification number: H01L29/66348 ,  H01L21/2205 ,  H01L21/2658 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/102 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7428 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/861 ,  H01L29/872

Abstract: A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.

公开(公告)号：US10325996B2

公开(公告)日：2019-06-18

申请号：US15724604

申请日：2017-10-04

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

IPC: H01L21/22 ,  H01L29/66 ,  H01L29/36 ,  H01L29/739 ,  H01L29/74 ,  H01L21/265 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/40 ,  H01L29/06 ,  H01L29/165

Abstract: A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.