公开(公告)号：US20220270985A1

公开(公告)日：2022-08-25

申请号：US17582285

申请日：2022-01-24

Applicant: Infineon Technologies AG

Inventor： Sergey Ananiev ,  Andreas Bauer ,  Michael Goroll ,  Maria Heidenblut ,  Stefan Kaiser ,  Gunther Mackh ,  Kabula Mutamba ,  Reinhard Pufall ,  Georg Reuther

IPC: H01L23/00

Abstract: A semiconductor chip having a crack stop structure is disclosed. The crack stop structure includes one or more recesses formed in the semiconductor chip. The one or more recesses extend adjacent to and along a periphery of the semiconductor chip. The one or more recesses are filled with a metal material. The metal material has an intrinsic tensile stress at room temperature that induces compressive stress in at least a region of the periphery of the semiconductor chip.